Electric-Susceptibility Mass of Free Carriers in Semiconductors

  • Jack R. Dixon
Part of the Optical Physics and Engineering book series (OPEG)


The relationship between the electric-susceptibility mass m s of free carriers in a semiconductor and the optical properties of the material in the infrared region of the spectrum was first pointed out and applied by Spitzer and Fan [1]. As part of their general treatment of this subject, they showed that reliable values of m s could often be obtained from simple measurements of the normal reflectivity as a function of wavelength. Since that time, this method has been used widely as an experimental tool for studying the nature of charge carriers in semiconductors [2–23].


Dielectric Constant Carrier Concentration Free Carrier Dispersion Mechanism Lead Telluride 
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Copyright information

© Springer Science+Business Media New York 1969

Authors and Affiliations

  • Jack R. Dixon
    • 1
  1. 1.U. S. Naval Ordnance LaboratoryWhite Oak, Silver SpringUSA

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