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Hopping Transport in High Electric Fields

  • I. G. Austin
Part of the NATO Advanced Study Institutes Series book series (NSSB, volume 17)

Abstract

In this lecture, we discuss the use of high electric fields to study phonon and photon assisted tunnelling processes between localised states in solids. Illustrations will be given, based on recent work on transition metal ion (TMI) compounds and chalcogenide glasses.

Many TMI glasses show a field dependent do mobility of the form μ =μ0.[sinh β F]/βF, where β = ea/2 kT, as expected for simple hopping. But the jump distance (a) is much larger than expected. Several possible explanations are discussed, including the problem of averaging in a disordered system, local field corrections, barriers etc. In contrast, chalcogenide glasses show a non—linear mobility of the form μ = μ0 exp eaF/kT, which extends to very low fields; this is probably a property of localised states near a mobility edge.

Optical hopping, or photon assisted tunnelling has been studied in charge transfer bands in TMI compounds, and also in connection with models of the Urbach edge in amorphous semiconductors. High field studies give a test of these models and will be briefly discussed.

Keywords

High Electric Field Charge Transfer Band Small Polaron Mobility Edge Jump Distance 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer Science+Business Media New York 1976

Authors and Affiliations

  • I. G. Austin
    • 1
  1. 1.Department of PhysicsThe UniversitySheffieldUK

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