Valence Band Discontinuities in HgTe-CdTe-ZnTe Heterojunction Systems

  • Jean-Pierre Faurie
Part of the NATO ASI Series book series (NSSB, volume 189)


II-VI HgTe-based semiconductor microstructures have recently attracted much interest because of their unique fundamental properties and their great technological interest for novel infrared devices. An important parameter, which determines most of the heterostructure properties is the valence-band discontinuity ΔEv. The value of ΔEv is presently disputed in HgTe-CdTe heterojunctions. Although large discrepancies exist between optical or magneto-optical and x-ray photoemission experiments it turns out that ΔEv can be classified into two groups: small ΔEv (0–120 meV) and large ΔEv (300–400 meV). This paper presents an overview of these experimental data.


Core Level Envelope Function CdTe Layer Growth Order Band Discontinuity 
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  1. 1.
    D.L. Smith, T.C. McGill and J.N. Schulman, Appl. Phys. Lett. 43, 180 (1983).ADSCrossRefGoogle Scholar
  2. 2.
    J.N. Schulman and T.C. McGill, Appl. Phys. Lett. 34, 663 (1979), and Phys. Rev. B23, 4149 (1981).Google Scholar
  3. 3.
    G. Bastard, Phys. Rev. B25, 7584 (1982).ADSCrossRefGoogle Scholar
  4. 4.
    J.0. McCaldin, T.C. McGill and C.A. Mead, Phys. Rev. Lett. 36, 56 (1976)Google Scholar
  5. 5.
    W. Harrison, J. Vac. Sci. Technol. 14, 1016 (1977).ADSGoogle Scholar
  6. 6.
    C. Tejedor and F. Flores, J. Phys. Cll, L19 (1978); F. Flores andGoogle Scholar
  7. C. Tejedor, J. Phys. C12, 731 (1979).ADSGoogle Scholar
  8. 7.
    J. Tersoff, Phys. Rev. Lett. 56, 2755, (1986).CrossRefGoogle Scholar
  9. 8.
    W.A. Harrison and J. Tersoff, J. Vac. Sci. Technol. B4, 1068 (1986).CrossRefGoogle Scholar
  10. 9.
    C.G. Van de Walle and R.M. Martin, J. Vac. Sci. Technol. B5, 1225 (1987).CrossRefGoogle Scholar
  11. 10.
    S.H. Wei and A. Zunger, J. Vac. Sci. Technol. B5, 1239 (1987), and Phys. Rev. Lett. 59, 144 (1987).Google Scholar
  12. 11.
    C. Priester, G. Allan and M. Lannoo, Journal de Physique C5, 48, 203 (1987).Google Scholar
  13. 12.
    A. Munoz, J.S. Dehesa and F. Flores, Phys. Rev. B35, 6468 (1987); A. Munoz, J.C. Duran and F. Flores, Surf. Sci. 181, L200 (1987).Google Scholar
  14. 13.
    M. Cardona, N.E. Christensen, Phys. Rev. B35, 6182 (1987).ADSCrossRefGoogle Scholar
  15. 14.
    J.P. Faurie and Y. Guldner. Heterojunction band discontinuities: Physics and Device Applications. Edited by F. Capasso and G. Margaritondo, Elsevier Science Publishers B.V. 1987 - Chapter 7, p. 283.Google Scholar
  16. 15.
    D.J. Olego, J.P. Faurie and P.M. Raccah, Phys. Rev. Lett. 55, 328 (1985). and D.J. Olego and J.P. Faurie, Phys. Rev. B33, 7357 (1986).Google Scholar
  17. 16.
    J. Reno, I.K. Sou, J.P. Faurie, J.M. Berroir, Y. Guldner, J.P. Vieren, Appl. Phys. Lett. 49, 106 (1986).ADSCrossRefGoogle Scholar
  18. 17.
    L.S. Kim, Y. Lansari, J.W. Han, J.W. Cook, J.F. Schetzina and J.N. Schulman, March meeting of the American Physical Society (1988) (unpublished).Google Scholar
  19. 18.
    J.P. Baukus, A.T. Hunter, O.J. Marsh, C.E. Jones, G.Y. Wu, S.R. Hetzler, T.C. McGill and J.P. Faurie, J. Vac. Sci. Technol., A4, 2110 (1986).ADSCrossRefGoogle Scholar
  20. 19.
    S.P. Kowalczyk, J.T. Cheung, E.A. Kraut and R.W. Grant, Phys. Rev. Lett. 56 (1986).Google Scholar
  21. 20.
    T.M. Duc, C. Hsu and J.P. Faurie, Phys. Rev. Lett. 58 (1987) 1127.Google Scholar
  22. 21.
    D.A. Chow, J.0. McCaldin, A.R. Bonnefoi, T.C. McGill, J.P. Faurie and I.K. Sou, Appl. Phys. Lett. 51 (1987).Google Scholar
  23. 22.
    J.P. Faurie, A. Million, R. Boch and J.L. Tissot, J. Vac. Sci. Technol. Al, 1593 (1983).Google Scholar
  24. 23.
    J.P. Faurie, IEEE J. Quantum Electron. QE-22, 1656 (1986).Google Scholar
  25. 24.
    K.A. Harris, S. Hwang, D.K. Blanks, J.W. Cook, J.F. Schetzina, N. Otsuka, J.P. Baukus, and A.P. Hunter, Appl. Phys. Lett. 48, 396 (1986).ADSCrossRefGoogle Scholar
  26. 25.
    J.P. Faurie, A. Million, and J. Piaguet (unpublished results, 1982 ).Google Scholar
  27. 26.
    J. Reno, R. Sporken, Y.J. Kim, C. Hsu, and J.P. Faurie, Appl. Phys. Lett. 51, 1545 (1987).ADSCrossRefGoogle Scholar
  28. 27.
    Y. Guldner, G. Bastard, J.P. Vieren, M. Voos, J.P. Faurie, and A. Million, Phys. Rev. Lett. 51, 907 (1983).ADSCrossRefGoogle Scholar
  29. 28.
    J.M. Berroir, Y. Guldner, J.P. Vieren, M. Voos, and J.P. Faurie, Phys. Rev. B34, 891 (1986).ADSCrossRefGoogle Scholar
  30. 29.
    J.M. Berroir, Y. Guldner, and M. Voos, IEEE J. Quantum Electron. 22, 1793 (1986).ADSCrossRefGoogle Scholar
  31. 30.
    J.N. Schulman and Y.-C. Chang, Phys. Rev. Lett. B33, 2594 (1986).ADSGoogle Scholar
  32. 31.
    Z. Yang and J.K. Furdyna, Appl. Phys. Lett. 52, 498 (1988).ADSCrossRefGoogle Scholar
  33. 32.
    The notation (B/A) specifies the growth order as B deposited on A and the notation (A-B) is for whatever the growth order is. In addition, the convention adopted regarding the sign of AEv is the following: AEv(A-B) > 0 corresponds to El) > E,I) in binding-energy scale.Google Scholar
  34. 33.
    J. Tersoff and C.G. Van de Walle, Phys Rev. Lett. 59 (1987).Google Scholar
  35. 34.
    T.M. Duc, C. Hsu and J.P. Faurie, Phys. Rev. Lett. 59, 947 (1987).ADSCrossRefGoogle Scholar
  36. 35.
    C. Hsu and J.P. Faurie, American Physical Society Meeting, 1988 (unpublished results).Google Scholar
  37. 36.
    R.W. Grant, E.A. Kraut, J.R. Waldrop and S.P. Kowalczyk in Heterojunction band discontinuities, Physics and device applications edited by F. Capasso and G. Margaritondo, Elsevier Science Publishers B.V., 181 (1987).Google Scholar
  38. 37.
    C. Hsu and J.P. Faurie, J. Vac. Sci. Technol. (to be published).Google Scholar
  39. 38.
    J.P. Faurie, C. Hsu and T.M. Duc, J. Vac. Sci. Technol. A5, 3074 (1987).ADSCrossRefGoogle Scholar
  40. 39.
    R. Sporken, C. Hsu and J.P. Faurie, 1988 (unpublished results).Google Scholar
  41. 40.
    C.K. Shih and W.E. Spier, Phys. Rev. Lett. 58, 2594 (1987).ADSCrossRefGoogle Scholar
  42. 41.
    C. Hsu, T.M. Duc and J.P. Faurie, Journal de Physique C5–48, 307 (1987).Google Scholar
  43. 42.
    M. Jaros, A. Zoryk and D. Ninno, Phys. Rev. B35, 6182 (1987).CrossRefGoogle Scholar
  44. 43.
    D.H. Chow, T.C. McGill, I.K. Sou, J.P. Faurie and C.W. Nieh, Appl. Phys. Lett. 52, 54 (1988).ADSCrossRefGoogle Scholar
  45. 44.
    M.A. Reed, R.J. Koestner, M.W. Goodwin and H.F. Schaake, J. Vac. Sci. Technol. (to be published).Google Scholar
  46. 45.
    C.A. Hoffman, J.R. Meyer, E.R. Youngdale, J.R. Lindle, F.J. Bartoli, K.A. Harris, J.W. Cook Jr. and J.F. Schetzina, Phys. Rev. (in press).Google Scholar

Copyright information

© Plenum Press, New York 1989

Authors and Affiliations

  • Jean-Pierre Faurie
    • 1
  1. 1.Department of PhysicsUniversity of Illinois at ChicagoChicagoUSA

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