Effect of a Parallel Magnetic Field on the Hole Levels in Semiconductor Superlattices

  • A. Fasolino
  • A. M. Altarelli
Part of the NATO ASI Series book series (NSSB, volume 189)


We present a calculation of the hole levels in a GaAs-GaA1As superlattice in a magnetic field parallel to the layers, when the magnetic length is greater or comparable with the superlattice period. A comparison with the electronic levels in the same field configuration shows noticeable analogies, but also differences related to the more complex hole subband structure. A calculation of interband magneto-optical transition intensities is also presented.


Interband Transition Light Hole Magnetic Field Parallel Orbit Centre Magnetic Length 
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Copyright information

© Plenum Press, New York 1989

Authors and Affiliations

  • A. Fasolino
    • 1
  • A. M. Altarelli
    • 2
    • 3
  1. 1.International School for Advanced StudiesTriesteItaly
  2. 2.Hochfeld MagnetlaborMax Planck Institut für FestkörperforschungGrenoble CedexFrance
  3. 3.European Synchrotron Radiation FacilityGrenoble CedexFrance

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