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Electronic Properties of Semiconductor Interfaces: The Control of Interface Barriers

  • Fernando Flores
Part of the NATO ASI Series book series (NSSB, volume 189)

Abstract

The electronic properties of metal-semiconductor interfaces and heterojunctions are discussed in relation to the formation of interface barriers. The theoretical results presented in this communication suggest that the semiconductor heights are basically determined by the intrinsic properties of the two crystals forming the interface. Small changes, up to 0.3eV, can be introduced, however, in the barriers by means of adequate intralayers deposited at the interface. This opens interesting applications from the point of view of the band structure engineering in semiconductor microstructures.

Keywords

Fermi Level Barrier Height Schottky Barrier Semiconductor Interface Interface Barrier 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

  1. 1.
    E.H. Rhoderick, Metal-Semiconductor Contact (Oxford: Oxford University Press 1987 ).Google Scholar
  2. 2.
    F.Braun, Papp.Ann. 153, 556 (1874)Google Scholar
  3. 3.
    N.F. Mott, Proc.Cam.Phyl.Soc.34, 568 (1938).ADSCrossRefGoogle Scholar
  4. 4.
    W. Schottky, Z.Phys. 113, 367 (1939).ADSzbMATHCrossRefGoogle Scholar
  5. 5.
    J. Bardeen, Phys.Rev. 71, 717 (1947).ADSCrossRefGoogle Scholar
  6. 6.
    V. Heine, Phys.Rev. 138, 1689 (1965).ADSCrossRefGoogle Scholar
  7. 7.
    T. Kendelewicz and I. Lindau, Crit. Rev, 13, 27 (1986)Google Scholar
  8. 8.
    L. Brillson, Handbook of Synchorotron Radiation, Vol II, ed. G.V. Marr ( Amsterdam: North-Holland, 1985 )Google Scholar
  9. 9.
    G. Le Lay, J.Vac.Sci.Technol. 2, 354 (1983)Google Scholar
  10. 10.
    C.Calandra, O.Bisi and G.Ottaviani, Surf.Sci.Rep, 4, 271 (1984).CrossRefGoogle Scholar
  11. 11.
    F.Flores and C.Tejedor, J.Phys.0 20, 145 (1987).ADSGoogle Scholar
  12. 12.
    C.Tejedor, F.Flores and E.Louis, J.Phys.0 11, L19 (1978)Google Scholar
  13. 13.
    J. Tersoff, Phys.Rev.Lett,32, 465 (1984)ADSCrossRefGoogle Scholar
  14. 14.
    F.Flores, Semiconductor Interfaces: Formation and Properties (ed. G.Le Lay, J.Derrien and N.Baccara) Springer-Verlag (1987).Google Scholar
  15. 15.
    R.L.Anderson, Ph.D.Thesis Syracuse University, New York (1960).Google Scholar
  16. 16.
    C.Tejedor and F.Flores, J.Phys C11,L19 (1978)Google Scholar
  17. 17.
    G.Margaritondo, Phys.Rev.B 31, 2526 (1985).ADSCrossRefGoogle Scholar
  18. 18.
    A.D. Katnani and G.Margaritondo, Phys.Rev.B 28, 1944 (1983).ADSCrossRefGoogle Scholar
  19. 19.
    F.Flores, A.Martin-Rodero, E.C.Goldberg and J.C.Durán Il Nuovo Cimento D (1988) in press.Google Scholar
  20. 20.
    P.Vogl, H.P.Hjalmaron and J.D.Dow, J.Phys.Chem.Solids 44, 365 (1983).CrossRefGoogle Scholar
  21. 21.
    F.Guinea, J.Sânchez-Dehesa and F.Flores, J.Phys. 0 17, 2039 (1983).Google Scholar
  22. 22.
    J.Ortega, J.Sânchez-Dehesa and F.Flores Phys.Rev.B (1988) in press.Google Scholar
  23. 23.
    M.Prietsh et al (to be published)Google Scholar
  24. 24.
    J.Ortega and F.Flores (to be published).Google Scholar
  25. 25.
    G.Platero, J.A.Vergés and F.Flores, Surface Sci. 168, 100 (1986).ADSCrossRefGoogle Scholar
  26. 26.
    H.I.Zhang and M. Schlüter, Phys.Rev.B 18, 1928 (1978)Google Scholar
  27. 27.
    C.G.Van del Walle and R.M.Martin, J.Vac.Sci.Techonol.B 4, 1055 (1986).Google Scholar
  28. 28.
    A.Munoz, J.Sânchez-Dehesa and F.Flores, Europhysics Lett 2, 335 (1986)ADSCrossRefGoogle Scholar
  29. 29.
    J.C. Duran, A. Munoz and F.Flores, Phys.Rev.B 35, 772 (1987)CrossRefGoogle Scholar
  30. 30.
    D.W.Niles, E.Colavita, D.Perfetti, C.Quaresima and M.Capozi. J.Vac.Sci.Technol. A4, 962 (1986)ADSCrossRefGoogle Scholar
  31. 31.
    P.Perfetti, Surface Sci. 189/190, 362 (1987)Google Scholar
  32. 32.
    J.C.Durân, A.Munoz, R.Pérez and F.Flores (to be published).Google Scholar

Copyright information

© Plenum Press, New York 1989

Authors and Affiliations

  • Fernando Flores
    • 1
  1. 1.Departamento de Física de la Materia CondensadaFacultad de Ciencias. Universidad Autónoma de MadridMadridSpain

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