Fourier Determination of the Hole Wavefunctions in P-Type Modulation Doped Quantum Wells by Resonant Raman Scattering

  • G. Fasol
  • T. Suemoto
  • U. Ekenberg
  • K. Ploog
Part of the NATO ASI Series book series (NSSB, volume 189)


We determine the electronic structure of p-type modulation doped quantum wells by resonant Raman scattering and using self consistent envelope function calculations. We demonstrate that closely spaced electronic energy levels in wide quantum wells can be determined with high precision from resonant Raman measurements. We determine the conduction band non-parabolicity experimentally and theoretically. We show that the height of sharp resonant peaks in the Raman scattering cross section as a function of laser energy is related to the transition matrix elements and yields the Fourier components of the hole wavefunction in terms of the electron wavefunctions. The hole wavefunction determined experimentally agrees reasonably well with the results of the calculations.


Resonance Peak Transition Matrix Element Raman Resonance Electron Wavefunctions Subband Energy 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.


Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.


  1. 1.
    T. Suemoto, G. Fasol and K. Ploog, Phys. Rev. B 37, 6397 (1988)ADSCrossRefGoogle Scholar
  2. 2.
    J. E. Zucker, A. Pinczuk, D. S. Chemla, A. Gossard and W. Wiegmann, Phys. Rev. Lett. 51, 1293 (1983)ADSCrossRefGoogle Scholar
  3. 3.
    J. E. Zucker, A. Pinczuk, D. S. Chemla, A. Gossard and W. Wiegmann, Phys. Rev. 29, 7065 (1984)ADSCrossRefGoogle Scholar
  4. 4.
    T. Suemoto, G. Fasol and K. Ploog, Phys. Rev. B34, 6034 (1986)ADSCrossRefGoogle Scholar
  5. 5.
    G. Abstreiter, M. Cardona and A. Pinczuk, in Light Scattering in Solids IV, Topics in Applied Physics Series, Vol. 54, edited by M. Cardona and G. Güntherodt ( Springer Verlag, Berlin, 1984 ), p. 5Google Scholar
  6. 6.
    A. Pinczuk, H. L. Störmer, A. C. Gossard and W. Wiegmann, in Proceedings of the 17th International Conference on the Physics of Semiconductors, ed. by J. D. Chadi and W. Harrison ( Springer Verlag, New York, 1985 ), p. 329Google Scholar
  7. 7.
    A. Pinczuk, D. Heiman, R. Sooryakumar, A. C. Gossard and W. Wiegmann, Surf. Science 170, 573 (1986)ADSCrossRefGoogle Scholar
  8. 8.
    D. Heiman, A. Pinczuk, A. C. Gossard, A. Fasolino and M. Altarelli, in Proceedings of the 18th International Conference on the Physics of Semiconductors, ed. by O. Engström, ( World Scientific, Singapore, 1987 ), p. 617Google Scholar
  9. 9.
    J.M.Luttinger and W.Kohn, Phys.Rev. 97, 869 (1955)ADSzbMATHCrossRefGoogle Scholar
  10. J.M.Luttinger, Phys.Rev. 102, 1030 (1956).ADSzbMATHCrossRefGoogle Scholar
  11. 10.
    M.Altarelli, Phys.Rev.B 28, 842 (1983).ADSCrossRefGoogle Scholar
  12. 11.
    See for example: M.Altarelli, U.Ekenberg and A.Fasolino, Phys.Rev.B 32, 5138 (1985).ADSCrossRefGoogle Scholar
  13. 12.
    D.A.Broido and L.J.Sham, Phys.Rev.B 31, 888 (1985).ADSCrossRefGoogle Scholar
  14. 13.
    E.Bangert and G.Landwehr, Superi. Microstr. 1, 363 (1985).CrossRefGoogle Scholar
  15. 14.
    T.Ando, J.Phys.Soc.Jpn. 54, 1528 (1985).ADSCrossRefGoogle Scholar
  16. 15.
    U.Ekenberg and M.Altarelli, Phys.Rev.B 32, 3712 (1985).ADSCrossRefGoogle Scholar
  17. 16.
    J.P.Eisenstein, H.L.Störmer, V.Narayanamurti, A.C.Gossard and W.Wiegmann, Phys.Rev.Lett. 53, 2579 (1984).ADSCrossRefGoogle Scholar
  18. 17.
    Y.Iye, E.E.Mendez, W.I.Wang and L.Esaki, Phys.Rev.B 33, 5854 (1986).ADSCrossRefGoogle Scholar
  19. 18.
    U.Ekenberg, to be published.Google Scholar
  20. 19.
    G. Fasol, to be publishedGoogle Scholar
  21. 20.
    U. Rössler, Solid State Commun. 49, 943 (1984)ADSCrossRefGoogle Scholar
  22. 21.
    U.Ekenberg, Phys.Rev.B 36, 6152 (1987).ADSCrossRefGoogle Scholar
  23. 22.
    J. Menéndez and M. Cardona, Phys. Rev. B31, 3696 (1985)ADSCrossRefGoogle Scholar
  24. 23.
    W. Kauschke and M. Cardona, Phys. Rev. 33, 5473 (1986)ADSCrossRefGoogle Scholar
  25. 24.
    F. Stem, Phys. Rev. B5, 4891 (1972)ADSCrossRefGoogle Scholar
  26. 25.
    T. Ando, A. B. Fowler and F. Stem, Rev. Mod. Phys. 54, 437 (1982)ADSCrossRefGoogle Scholar

Copyright information

© Plenum Press, New York 1989

Authors and Affiliations

  • G. Fasol
    • 1
  • T. Suemoto
    • 2
  • U. Ekenberg
    • 1
  • K. Ploog
    • 3
  1. 1.Cavendish LaboratoryCambridgeEngland
  2. 2.Research Institute for Scientific MeasurementsTohoku UniversityKatahira, Sendai 980Japan
  3. 3.Max-Planck-Institut für FestkörperforschungStuttgart 80Fed. Rep. of Germany

Personalised recommendations