Abstract
In this paper we provide a brief overview of the properties of excitons in GaAs-A1GaAs quantum well structures. We first briefly review the various calculations of the binding energies of excitons in quantum wells as a function of well size and compare these results with the available experimental data. We then outline briefly the calculations of the binding energies, oscillator strengths and absorption spectra of excitons in quantum wells in the presence of an externally applied electric field and again compare these results with the experimental data. We also point out the applications of these results to a class of opto-electronic devices.
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Bajaj, K.K., Sanders, G.D., Greene, R.L. (1989). Excitons in Quantum Well Structures. In: Abram, R.A., Jaros, M. (eds) Band Structure Engineering in Semiconductor Microstructures. NATO ASI Series, vol 189. Springer, Boston, MA. https://doi.org/10.1007/978-1-4757-0770-0_27
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DOI: https://doi.org/10.1007/978-1-4757-0770-0_27
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