Abstract
The heterojunction band offset, i.e. the position of the bandedges in one semiconductor relative to those in another one in close contact, presents a problem in solid state physics which is neither experimentally nor theoretically well understood. Yet this quantity is of growing and crucial interest for the characterisation and design of novel heterostructure devices, which can now be grown with near perfection by modern growth techniques such as MBE) and MOCVD)1–3
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Claessen, L.M. (1989). The Pressure Dependent Band Offset in a Type II Superlattice, a Test for Band Line-Up Theories. In: Abram, R.A., Jaros, M. (eds) Band Structure Engineering in Semiconductor Microstructures. NATO ASI Series, vol 189. Springer, Boston, MA. https://doi.org/10.1007/978-1-4757-0770-0_2
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