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Band Structure Engineering in Semiconductor Microstructures pp 1–6Cite as

Comments on “Can Band Offsets be Changed Controllably?”

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Part of the book series: NATO ASI Series ((NSSB,volume 189))

Abstract

Offsets of valence and conduction bands at interfaces are among the key design parameters which allow engineering of electronic properties of semiconductor heterostructures. In this paper are discussed some current theoretical ideas on the causes of the offsets and the extent to which the interface dipole can be changed by atomic scale control of the chemical composition at the interface. The primary conclusion is that significant variations appear possible by the dipoles due to oriented pairs of polar atoms at the interface. Conditions where this can occur are discussed.

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Author information

Authors and Affiliations

  1. Department of Physics, University of Illinois, Urbana, IL, 61801, USA

    Richard M. Martin

Authors
  1. Richard M. Martin
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Editor information

Editors and Affiliations

  1. School of Engineering and Applied Science, University of Durham, Durham, UK

    R. A. Abram

  2. Department of Theoretical Physics, University of Newcastle upon Tyne, Newcastle upon Tyne, UK

    M. Jaros

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© 1989 Plenum Press, New York

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Martin, R.M. (1989). Comments on “Can Band Offsets be Changed Controllably?”. In: Abram, R.A., Jaros, M. (eds) Band Structure Engineering in Semiconductor Microstructures. NATO ASI Series, vol 189. Springer, Boston, MA. https://doi.org/10.1007/978-1-4757-0770-0_1

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  • DOI: https://doi.org/10.1007/978-1-4757-0770-0_1

  • Publisher Name: Springer, Boston, MA

  • Print ISBN: 978-1-4757-0772-4

  • Online ISBN: 978-1-4757-0770-0

  • eBook Packages: Springer Book Archive

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