Comments on “Can Band Offsets be Changed Controllably?”

  • Richard M. Martin
Chapter
Part of the NATO ASI Series book series (NSSB, volume 189)

Abstract

Offsets of valence and conduction bands at interfaces are among the key design parameters which allow engineering of electronic properties of semiconductor heterostructures. In this paper are discussed some current theoretical ideas on the causes of the offsets and the extent to which the interface dipole can be changed by atomic scale control of the chemical composition at the interface. The primary conclusion is that significant variations appear possible by the dipoles due to oriented pairs of polar atoms at the interface. Conditions where this can occur are discussed.

Keywords

Polar Interface Polar Atom Full Calculation Semiconductor Heterostructures Band Offset 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.
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Copyright information

© Plenum Press, New York 1989

Authors and Affiliations

  • Richard M. Martin
    • 1
  1. 1.Department of PhysicsUniversity of IllinoisUrbanaUSA

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