Advertisement

Comments on “Can Band Offsets be Changed Controllably?”

  • Richard M. Martin
Chapter
Part of the NATO ASI Series book series (NSSB, volume 189)

Abstract

Offsets of valence and conduction bands at interfaces are among the key design parameters which allow engineering of electronic properties of semiconductor heterostructures. In this paper are discussed some current theoretical ideas on the causes of the offsets and the extent to which the interface dipole can be changed by atomic scale control of the chemical composition at the interface. The primary conclusion is that significant variations appear possible by the dipoles due to oriented pairs of polar atoms at the interface. Conditions where this can occur are discussed.

Keywords

Polar Interface Polar Atom Full Calculation Semiconductor Heterostructures Band Offset 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.
This is a preview of subscription content, log in to check access.

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. 1.
    Recent reviews of experimental work and interpretations have been given by G. Margaritondo, Surf. Sci. 168, 439 (1986)ADSCrossRefGoogle Scholar
  2. R. S. Bauer and G. Margaritondo, Physics Today, 40, 26 (1987).ADSCrossRefGoogle Scholar
  3. 2.
    For a recent review of theory, see J. Tersoff, in Heterojunctions: A Modern View of Band Discontinuities and Applications,G. Margaritondo and F. Capasso, eds. (North Holland, Amsterdam, in press).Google Scholar
  4. 3.
    A recent review comparing various models and full calculations is given in R. M. Martin, “Asian Pacific Symposium on Surface Physics”, ed. by Xie Xide ( World Scientific, Singapore, 1987 ), p. 14.Google Scholar
  5. 4.
    C. G. Van de Walle, Ph.D. thesis, Stanford University, Palo Alto, California, 1986 (unpublished); most results are published in Refs. 5–6.Google Scholar
  6. 5.
    C. G. Van de Walle and R. M. Martin, J. Vac. Sci. Technol. B 3, 1256 (1985).CrossRefGoogle Scholar
  7. C. G. Van de Walle and R. M. Martin, Phys. Rev. B 34, 5621 (1986).CrossRefGoogle Scholar
  8. 6.
    C. G. Van de Walle and R. M. Martin, J. Vac. Sci. Technol. B 4, 1055 (1986)Google Scholar
  9. C. G. Van de Walle and R. M. Martin, Phys. Rev. B 35, 8524 (1987).Google Scholar
  10. C. G. Van de Walle and R. M. Martin, Phys. Rev. B 37, 4108 (1987).Google Scholar
  11. 7.
    M. Cardona and N. E. Christensen, Phys. Rev. B 35, 6182 (1987).ADSCrossRefGoogle Scholar
  12. 8.
    N. E. Christensen, Phys. Rev. B 37, 4528 (1988).ADSCrossRefGoogle Scholar
  13. 9.
    D. M. Bylander and L. Kleinman, Phys. Rev. B 36, 3229 (1987).ADSCrossRefGoogle Scholar
  14. 10.
    S. B. Massidda, B. I. Min, and A. J. Freeman, Phys. Rev. B 35, 987 (1987).ADSCrossRefGoogle Scholar
  15. 11.
    K. Kunc and R. M. Martin, Phys. Rev. B 24, 3445 (1981).ADSCrossRefGoogle Scholar
  16. 12.
    R. L. Anderson, Solid-State Electron. 5, 341 (1962).ADSCrossRefGoogle Scholar
  17. 13.
    W. A. Harrison, J. Vac. Sci. Technol. 14, 1016 (1977).ADSGoogle Scholar
  18. 14.
    W. R. Frensley and H. Kroemer, Phys. Rev. B 16, 2642 (1977).ADSCrossRefGoogle Scholar
  19. 15.
    C. Tejedor, F. Flores, and E. Louis, J. Phys. C 10, 2163 (1977).ADSGoogle Scholar
  20. F. F.ores and C. Tejedor, J. Phys. C 12, 731 (1979).ADSGoogle Scholar
  21. 16.
    J. Tersoff, Phys. Rev. Leu. 52, 465 (1984); J. Tersoff, Phys. Rev. B 30, 4874 (1984)ADSCrossRefGoogle Scholar
  22. see also W. A. Harrison and J. Tersoff, J. Vac. Sci. Technol. B 4, 1068 (1986).CrossRefGoogle Scholar
  23. 17.
    C. Mailhiot and C. B. Duke, Phys. Rev. B 33 1118 (1986).ADSCrossRefGoogle Scholar
  24. 18.
    J. A. Van Vechten, J. Vac. Sci. Technol. B 3, 1240 (1985).CrossRefGoogle Scholar
  25. 19.
    M. Jaros, Phys. Rev. B, to be published.Google Scholar
  26. 20.
    F. Guinea, J. Sanchez-Dehesa, and F. Flores, J. Phys. C 16, 6499 (1983)ADSGoogle Scholar
  27. G. Platero, J. Sanchez-Dehesa, C. Tejedor, and F. Flores, Surf. Sci. 168, 553 (1986)ADSCrossRefGoogle Scholar
  28. A. Munoz, J. C. Duran, and F. Flores, Surf. Sci. 181, L200 (1988).Google Scholar
  29. 21.
    C. Priester, G. Allan, and M. Lanoo, Phys. Rev. 33, 7386 (1986).ADSCrossRefGoogle Scholar
  30. 22.
    W. A. Harrison, J. Vac. Sci. Technol. 16, 1492 (1979).ADSGoogle Scholar
  31. 23.
    R. M. Martin, J. Vac. Sci. Technol. 17, 978 (1980).ADSGoogle Scholar
  32. 24.
    A. Munoz, private communication.Google Scholar
  33. 25.
    S. Satpathy and R. M. Martin, unpublished.Google Scholar
  34. 26.
    S. Satpathy and R. M. Martin, Bull. Am. Phys. Soc. 33, 374 (1988), and to be published in Phys. Rev.Google Scholar
  35. 27.
    M. A. Olmstead, R.I.G. Uhrbers, R. D. Bringans, and R. Z. Bachrach, Phys. Rev. B 35, 7526 (1987).ADSCrossRefGoogle Scholar

Copyright information

© Plenum Press, New York 1989

Authors and Affiliations

  • Richard M. Martin
    • 1
  1. 1.Department of PhysicsUniversity of IllinoisUrbanaUSA

Personalised recommendations

Cite chapter

Buy options