Gallium-Doped Germanium Resistance Thermometers

  • F. J. Low
Part of the Advances in Cryogenic Engineering book series (ACRE, volume 7)

Abstract

It has been well established that the characteristics of single-crystal germanium doped with certain impurities are suitable for resistance thermometry at low temperatures. Indium was used as the dopant by Estermann [1] and by Friedberg [2], whereas Kunzler et al. [3] have described in detail a four-lead thermometer using arsenic as the major impurity. We have employed galliumdoped germanium with an impurity concentration of about 6 · 10-16 cm-3 and find that it has a characteristic which is useful over the range from 1° to 40°K.

Keywords

Gallium Arsenide Gold Wire Impurity Conduction High Temperature Hydrogen Cryogenic Fluid 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

  1. 1.
    I. Estermann, Phys. Rev., Vol. 78, 83 (1950).Google Scholar
  2. 2.
    S.A. Friedberg, Phys. Rev., Vol. 82, 764 (1951).Google Scholar
  3. 3.
    J.E. Kunzler, T.H. Geballe, and G.W. Hull, Rev. Sci. Instr., Vol. 28, 96, (1957).CrossRefGoogle Scholar
  4. 4.
    H. Fritzche, Phys. Rev., Vol. 119, 1899 (1960).CrossRefGoogle Scholar
  5. 5.
    H. Fritzche, Bull. Am. Phys. Soc., Vol. 6, No. 2, 136 (1961).Google Scholar

Copyright information

© Springer Science+Business Media New York 1962

Authors and Affiliations

  • F. J. Low
    • 1
  1. 1.Texas Instruments Inc.DallasUSA

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