The Crystallization of Germanium on Silicon and of Silicon on Germanium

Kokorish, N. P.

doi:10.1007/978-1-4757-0471-6_21

The Crystallization of Germanium on Silicon and of Silicon on Germanium

N. P. Kokorish¹

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Abstract

Germanium and silicon both have diamond-type lattices, and their lattice parameters differ by only 4.03% (a_Ge = 5.65 A, a_Si = 5.42 A, a_Ge/a_Si = 1.0402).

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Literature Cited

Stör and Klemm, Z. anorg. Chem. 241, 405 (1939).
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N. N. Sheftal’, N. P. Nokorish, and A. V. Krasilov, Izv. Akad. Nauk SSSR, Ser. Fiz. 21, 1, 147–152 (1957).
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Institute of Crystallography, Academy of Sciences, USSR
N. P. Kokorish

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N. P. Kokorish
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A. V. Shubnikov N. N. Sheftal’

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Kokorish, N.P. (1959). The Crystallization of Germanium on Silicon and of Silicon on Germanium. In: Shubnikov, A.V., Sheftal’, N.N. (eds) Growth of Crystals. Springer, Boston, MA. https://doi.org/10.1007/978-1-4757-0471-6_21

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DOI: https://doi.org/10.1007/978-1-4757-0471-6_21
Publisher Name: Springer, Boston, MA
Print ISBN: 978-1-4757-0473-0
Online ISBN: 978-1-4757-0471-6
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