Abstract
Very thin epitaxial layers of III–V semiconductor compounds of accurately controlled thickness and composition can be prepared by low pressure metal organic chemical vapor deposition growth technique. The interfaces between these layers significantly Influence their electronic and optical properties and, ultimately, device performance.
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Razeghi, M. (1987). MOCVD Growth of Narrow GAP Low Dimensional Structures. In: Farrow, R.F.C., Parkin, S.S.P., Dobson, P.J., Neave, J.H., Arrott, A.S. (eds) Thin Film Growth Techniques for Low-Dimensional Structures. NATO ASI Series, vol 163. Springer, Boston, MA. https://doi.org/10.1007/978-1-4684-9145-6_9
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DOI: https://doi.org/10.1007/978-1-4684-9145-6_9
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