Abstract
When, during the early phase of organizing this research workshop, Dr. Robin Farrow approached me, not only was I supportive of the idea and its timeliness in bringing together a disparate community of researchers in the area of thin film epitaxial growth, but also was pleased to have the opportunity to present some of the work undertaken at University of Southern California in the area of molecular beam epitaxial (MBE) growth of III–V compound semiconductors. Judging by the level of interest and discussions, often quite spirited, that occurred during the workshop, it is quite clear that the organizers succeeded in their objective quite well. In writing this article I am therefore mindful of capturing some of the spirit, excitement, and controversies, real or imagined.
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References
For MBE of III–V Semiconductors, see for example, A.C. Gossard, Thin Films: Preparation and Properties, Eds. K.N. Tu and Ro. Rosenberg (Ac. Press, New York, 1982).
For an overview of modulated structures, see “Synthetic Modulated Structures”, Eds. L.L. Chang and B.C. Giessen (Ac. Press, New York, 1985).
See also, Proceedings of the First International Conference on Metastable and Modulated Semiconductor Structures, Dec. 1982, Pasadena, Ca., Eds. F.J. Grunthaner and A. Madhukar, Jour. Vac. Sci. Tech. B1, p.217 (1983).
A. Madhukar and S.V. Ghaisas, CRC Critical Reviews in Solid State and Materials Sciences (To appear, 1987).
S.V. Ghaisas and A. Madhukar (To be published).
S.V. Ghaisas and A. Madhukar, Phys. Rev. Lett. 56, 1066 (1986).
J.H. Neave, B.A. Joyce, P.J. Dobson and N. Norton, App. Phys. A31, 1, (1983)
J.H. Neave, B.A. Joyce, P.J. Dobson and N. Norton, App. Phys. A34, 1 (1984).
M. Thomsen and A. Madhukar, Jour. Cryst. Growth (To appear).
F. Voillot, A. Madhukar, J.Y. Kim, P. Chen, N.M. Cho, W.C. Tang and P.G. Newman, App. Phys. Lett. 48, 1009 (1986).
F. Voillot, A. Madhukar, W.C. Tang, M. Thomsen, J.Y. Kim, and P. Chen, App. Phys. Lett. (Jan. 26, 1987 issue, In Press)
A. Madhukar, P. Chen, F. Voillot, M. Thomsen, J.Y. Kim, W.C. Tang and S. V. Ghaisas, Jour. Cryst. Growth (In Press).
F. Voillot, J.Y. Kim, W.C. Tang A. Madhukar and P. Chen, Paper presented at the 2nd International Conference on Superlattices, Microstructures and Microdevices, Aug. 1986, (Goteborg, Sweden). Superlattices and Microstructures (In Press).
A. Madhukar, S.B. Ogale, W.C. Tang, and F. Voillot, Phys. Rev. Lett. (Submitted).
J.J. Harris, B.A. Joyce and P.J. Dobson, Surf. Sc. Letts., 103 L90 (1981)
J.J. Harris, B.A. Joyce and P.J. Dobson, C.E.C. Wood, 108, L441 (1981).
J.M. Van Hove, C.S. Lent, P.R. Pukite and P. Cohen, Jour. Vac. Sc. Tech. B1, 741 (1983);
J.M. Van Hove, C.S. Lent, P.R. Pukite and P. Cohen, Jour. Vac. Sc. Tech. B3, 546 (1984).
T. Sakamoto, H. Funabashi, K. Ohta, T. Nakagowa, N.J. Kawai and T. Kojima, Japanese Jour. App. Phys. 23, L657 (1984).
B.F. Lewis, T.C. Lee, F.J. Grunthaner, A. Madhukar, R. Fernandez and J. Maserjian, Jour. Vac. Sc.Tech. B2, 419 (1984).
A. Madhukar, S.V. Ghaisas, T.C. Lee, M.Y. Yen, P. Chen, J.Y. Kim, and P.G. Newman, Proceedings of the SPIE Conference, Los Angeles, (Jan. 20–25, 1985), Vol. 524, 78 (1985).
A. Madhukar, T.C. Lee, M.Y. Yen, P. Chen, J.Y. Kim, and P.G. Newman, App. Phys. Lett. 46, 1148 (1985).
T.C. Lee, M.Y. Yen, P. Chen and A. Madhukar, Jour. Vac. Sc. Tech. A4, 884 (1986).
M.Y. Yen, T.C. Lee, P. Chen and A. Madhukar, Jour. Vac. Sc. Tech. B4, 590 (1986).
T.C. Lee, M.Y. Yen, P. Chen and A. Madhukar, Surf. Sc.174, 55 (1986).
P. Chen, A. Madhukar, J.Y. Kim and T.C. Lee, App. Phys. Lett. 48, 650 (1986).
P. Chen, J.Y. Kim, A. Madhukar and N.M Cho, Jour. Vac. Sc. Tech. B4, 890 (1986).
P. Chen, A. Madhukar, J.Y. Kim and N.M. Cho, Paper presented at the 18th International Conference on Physics of Semiconductors, Aug. 1986 (Stockholm, Sweden). To appear in the proceedings.
B.A. Joyce, P.J. Dobson, J.H. Neave, K. Woodbridge, J. Zhang, P.K. Larsen and B. Bolger, Surf. Sc. 168, 423 (1986).
P.K. Larsen, P.J. Dobson, J.H. Neave, B.A. Joyce, B. Bolger and J. Zhang, Surf. Sc. 169 176 (1986).
B.F. Lewis, F.J. Grunthaner, A. Madhukar, T.C. Lee and R. Fernandez, Jour. Vac. Sc. Tech. B3, 1317 (1985)
B.F. Lewis, R. Fernandez, A. Madhukar and F.J. Grunthaner, Jour. Vac. Sc. Tech. B4, 560 (1986)
P. Chen, N.M. Cho and A. Madhukar (Unpublished).
N.M. Cho, A. Madhukar and P. Chen, (To be published).
The Philips group (Drs. B.A. Joyce, P.J. Dobson, J.H. Neave, P.K. Larsen and co-workers), referring to the theory of RHEED given by P.A. Maksym and J.L. Beeby (Surf. Sc. 110, 423 (1981)), has repeatedly asserted that the theoretical treatment exists for analysis of the data, though it has never been used by them. The authors themselves have not made such claims. Work on the theory of RHEED in our group at USC has been underway for the past two years and revealed some time ago that the results of the above noted theory are non-convergent. Similar conclusions have independently been reached by Dr. S.Y. Tong of University of Wisconsin, Milwaukee (private communication). Discussions with Drs. Beeby and Maksym at this workshop indicate that their most recent work, presented at this workshop, may not suffer from earlier difficulties. However, this, as well as the theory developed at USC (M. Thomsen and A. Madhukar, unpublished) which predicts oscillations, need to be adequately tested before they may be considered suitable. There is thus the possibility that reliable and implementable theories of RHEED may become available in the near future. In the meantime, it would be well for prospective users to refrain from originating and perpetuating claims far beyond those that the authors themselves are willing to make.
F.J. Grunthaner, B.F. Lewis, A. Madhukar, T.C. Lee, M.Y. Yen and R. Fernandez, Invited paper presented at the 1st International Conference on Superlattices, Microstructures and Microdevices, Aug. 1984 (Urbana, Illinois).
F.J. Grunthaner, M.Y. Yen, R. Fernandez, T.C. Lee, A. Madhukar and B.F. Lewis, App. Phys. Lett. 46, 9 (1985).
F.J. Grunthaner, M.Y. Yen, R. Fernandez, T.C. Lee, A. Madhukar and B.F. Lewis, App. Phys. Lett. 46, 83 (1985).
N. Sano, H. Kato, M. Nakayama, S. Chika and H. Terauchi, Japanese Jour. App. Phys. 23, L640 (1984).
H. Sakaki, M. Tanaka and J. Yoshino, Japanese Jour. App. Phys. 24, L417 (1985).
T. Fukunaga, K.L. Kobayashi and H. Nakashima, Japanese Jour. App. Phys. 24, L510 (1985).
T. Hayakawa, T. Suzima, K. Takahashi, M. Kondo, S. Yamamoto, S. Yano and T. Hijikata, App. Phys. Lett. 47, 52 (1985).
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Madhukar, A. (1987). Molecular Beam Epitaxial Growth Kinetics, Mechanism(s) and Interface Formation: Computer Simulations and Experiments. In: Farrow, R.F.C., Parkin, S.S.P., Dobson, P.J., Neave, J.H., Arrott, A.S. (eds) Thin Film Growth Techniques for Low-Dimensional Structures. NATO ASI Series, vol 163. Springer, Boston, MA. https://doi.org/10.1007/978-1-4684-9145-6_4
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DOI: https://doi.org/10.1007/978-1-4684-9145-6_4
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