Abstract
X-ray diffraction line profiles from layered structures grown epitaxially on perfect single crystal substrates contain a lot of information which can be correlated with the concentration depth profile in the grown structure (Bartels and Nijman, 1978). The diffraction profiles (rocking curves) of perfect crystals like silicon and gallium arsenide have a very narrow intrinsic half-width down to 2″, so that it is possible to detect the small changes in lattice constant typically related with processes like epitaxy, diffusion and ion-implantation. For this purpose a high-resolution X-ray diffractometer has been designed, where the germanium four-crystal monochromator results in an almost parallel and monochromatic incident beam for investigating the specimen (Bartels, 1983; Bartels, 1983/84). The actual concentration depth profile in a given layered structure can only be obtained after a detailed comparison of observed and calculated diffraction profiles.
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Bartels, W.J. (1987). Characterization of Superlattices by X-Ray Diffraction. In: Farrow, R.F.C., Parkin, S.S.P., Dobson, P.J., Neave, J.H., Arrott, A.S. (eds) Thin Film Growth Techniques for Low-Dimensional Structures. NATO ASI Series, vol 163. Springer, Boston, MA. https://doi.org/10.1007/978-1-4684-9145-6_24
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