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RHEED Intensity Oscillations and the Epitaxial Growth of Quasi-2d Magnetic Semiconductors

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Part of the book series: NATO ASI Series ((NSSB,volume 163))

Abstract

Reflection high energy electron diffraction (RHEED) intensity oscillations have been observed in the II-VI compound ZnSe and in the magnetic semiconductor MnSe. These RHEED intensity oscillations provided monolayer resolution in the growth of superlattice structures designed to explore the effects of reduced dimensionality on the magnetic ordering of MnSe. Using molecular beam epitaxy, the heretofore hypothetical zincblende MnSe has been grown. Although “thick” layers of MnSe are antiferromagnetic, thin layers of one, three, and four monolayers were found to exhibit paramagnetic behavior. The growth, use of the RHEED intensity oscillations, and magneto-optical characterization of these unique, highly lattice-mismatched structures is discussed. In addition nucleation characteristics, obtained via RHEED intensity oscillations, are described at a II-VI compound/HI-V compound interface for the ZnSe/GaAs heterojunction.

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References

  1. R. Venkatasubramanian, N. Otsuka, S. Datta, L. A. Kolodziejski, and R. L. Gunshor, “Monte Carlo Simulation of Growth of II-VI Semiconductors by MBE,” Materials Research Society Symposium, Dec. 1–5, 1987, Boston.

    Google Scholar 

  2. L. A. Kolodziejski, T. Sakamoto, R. L. Gunshor, and S. Datta, “Molecular Beam Epitaxy of Cd1-xMxTe,” Appl. Phys. Lett. 44:799 (1984).

    Article  ADS  Google Scholar 

  3. L. A. Kolodziejski, R. L. Gunshor, T. C. Bonsett, R. Venkatasubramanian, S. Datta, R. B. Bylsma, W. M. Becker, and N. Otsuka, “Wide Gap II-VI Superlattices of ZnSe-ZnMnSe,” Appl. Phys. Lett. 47:169 (1985).

    Article  ADS  Google Scholar 

  4. L. A. Kolodziejski, T. C. Bonsett, R. L. Gunshor, S. Datta, R. B. Bylsma, W. M. Becker, and N. Otsuka, “Molecular Beam Epitaxy of Diluted Magnetic Semiconductor (CdMnTe) Superlattices,” Appl. Phys. Lett. 45:440 (1984).

    Article  ADS  Google Scholar 

  5. L. A. Kolodziejski, R. L. Gunshor, S. Datta, T. C. Bonsett, M. Yamanishi, R. Frohne, T. Sakamoto, R. B. Bylsma, W. M. Becker, and N. Otsuka, “MBE Growth of Films and Superlattices of Diluted Magnetic Semiconductors,” J. Vac. Sci. Technol. B3:714 (1985).

    Google Scholar 

  6. R. N. Bicknell, R. Yanka, N. C. Giles-Taylor, D. K. Blanks, E. L. Buckland, and J. F. Schetzina, “CdMnTe-CdTe Multilayers Grown by Molecular Beam Epitaxy,” Appl. Phys. Lett. 45:92 (1984).

    Article  ADS  Google Scholar 

  7. R. N. Bicknell, R. W. Yanka, N. C. Giles-Taylor, D. K. Blanks, E. L. Buckland, and J. F. Schetzina, “Properties of CdMnTe-CdTe Superlattices Grown by Molecular Beam Epitaxy,” J. Vac. Sci. Technol. B3:709 (1985).

    Google Scholar 

  8. L. A. Kolodziejski, R. L. Gunshor, N. Otsuka, X. C. Zhang, S. K. Chang, and A. V. Nurmikko, “(lOO)-Oriented Superlattices of Cd0.76Mn0.24Te on (100) GaAs,” Appl. Phys. Lett. 47:882 (1985).

    Article  ADS  Google Scholar 

  9. R. L. Gunshor, L. A. Kolodziejski, N. Otsuka, and S. Datta, “ZnSe-ZnMnSe and CdTe-CdMnTe Superlattices,” Surf. Sci. 174:522 (1986).

    Article  ADS  Google Scholar 

  10. L. A. Kolodziejski, R. L. Gunshor, N. Otsuka, S. Datta, W. M. Becker, and A. V. Nurmikko, “Wide Gap II-VI Superlattices,” IEEE on Quantum Electronics QE-22:1666 (1986).

    Article  ADS  Google Scholar 

  11. D. R. Yoder-Short, U. Debska, and J. K. Furdyna, “Lattice Parameters of Znx_xMnxSe and Tetrahedral Bond Lengths in A II1-x MnxBIV Alloys,” J. Appl. Phys. 58:4056 (1985).

    Article  ADS  Google Scholar 

  12. L. A. Kolodziejski, R. L. Gunshor, N. Otsuka, B. P. Gu, Y. Hefetz, and A. V. Nurmikko, “Two-dimensional Metastable Magnetic Semiconductor Structures,” Appl. Phys. Lett. 48:1482 (1986).

    Article  ADS  Google Scholar 

  13. R. L. Gunshor, L. A. Kolodziejski, M. R. Melloch, M. Vaziri, C. Choi, and N. Otsuka, “Nucleation and Characterization of Pseudomorphic ZnSe Grown on Molecular Beam Epitaxially-Grown GaAs Epilayers,” Appl. Phys. Lett. 50:xxx (1987).

    Article  Google Scholar 

  14. T. Yao, S. Amano, Y. Makita, and S. Naekawa, “Molecular Beam Epitaxy of ZnTe Single Crystal Thin Films,” Jpn. J. Appl. Phys. 15:1001 (1976).

    Article  ADS  Google Scholar 

  15. R. M. Park, N. M. Salansky, “Surface Structures and Properties of ZnSe Grown on (100) GaAs by Molecular Beam Epitaxy,” Appl. Phys. Lett. 44:249 (1984).

    Article  ADS  Google Scholar 

  16. T. Yao and T. Takeda, “Growth Process in Atomic Layer Epitaxy of Zn Chalcogenide Single Crystalline Films on (100) GaAs,” Appl. Phys. Lett. 48:160 (1986).

    Article  ADS  Google Scholar 

  17. B. F. Lewis, T. C. Lee, F. J. Grunthaner, A. Madhukar, R. Fernandez, and J. Maserjian, “RHEED Oscillation Studies of MBE Growth Kinetics and Lattice Mismatch Strain-Induced Effects During InGaAs Growth on GaAs (100),” J. Vac. Sci. Technol. B2:419(1984).

    ADS  Google Scholar 

  18. D. L. Decker and R. L. Wild, “Optical Properties of α-MnSe,” Phys. Rev. B 4:3425 (1971).

    Article  ADS  Google Scholar 

  19. J. W. Allen, G. Lucovsky, J. C. Mikkelsen, “Optical Properties and Electronic Structure of Crossroads Material MnTe,” Solid State Commun. 24:367(1977).

    Article  ADS  Google Scholar 

  20. J. K. Furdyna, R. B. Frankel, and U. Debska, unpublished.

    Google Scholar 

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Kolodziejski, L.A., Gunshor, R.L., Nurmikko, A.V., Otsuka, N. (1987). RHEED Intensity Oscillations and the Epitaxial Growth of Quasi-2d Magnetic Semiconductors. In: Farrow, R.F.C., Parkin, S.S.P., Dobson, P.J., Neave, J.H., Arrott, A.S. (eds) Thin Film Growth Techniques for Low-Dimensional Structures. NATO ASI Series, vol 163. Springer, Boston, MA. https://doi.org/10.1007/978-1-4684-9145-6_14

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  • DOI: https://doi.org/10.1007/978-1-4684-9145-6_14

  • Publisher Name: Springer, Boston, MA

  • Print ISBN: 978-1-4684-9147-0

  • Online ISBN: 978-1-4684-9145-6

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