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Reflection High-Energy Electron Diffraction Intensity Oscillation — An Effective Tool of Si and GexSi1-x Molecular Beam Epitaxy

  • Chapter
Thin Film Growth Techniques for Low-Dimensional Structures

Part of the book series: NATO ASI Series ((NSSB,volume 163))

Abstract

Molecular beam epitaxy (MBE) is becoming an important technique for growing epitaxial Si based films. The first advantage of Si MBE is a low growth temperature, usually in the range of 400 to 800°C, which is much lower than that required for conventional techniques. The lower growth temperature reduces diffusion of dopants. The second advantage is an excellent control of doping distribution which is essential for high speed VLSI. The third advantage is an ability to fabricate heterojunction and superlattice structures. Examples are GexSi1-x strained-layer super-lattices1–5, metal suicides6,7, Si on insulators8,9 and Si hetero-junctions with III–V compound semiconductors10,11. Among them, hetero-epitaxy of GexSi1-x/Si attracts much attention because it can add to conventional Si integrated circuits exciting possibilities of hetero-junction devices. Modulation-doped GexSi1-x/Si strained-layer hetero-structures showed two-dimensional carrier gas properties and enhanced mobilities for electron2 and hole3. Recently, n-channel4 and p-channel5 modulation-doped field effect transistors were successfully fabricated.

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Author information

Authors and Affiliations

  1. Electrotechnical Laboratory, Tsukuba, Ibaraki, 305, Japan

    Tsunenori Sakamoto, Kunihiro Sakamoto, Satoru Nagao, Gen Hashiguchi, Katsuya Kuniyoshi & Yoshio Bando

  2. Mitsubishi Chemical Industries Research Center, Japan

    Satoru Nagao

  3. Chuo University, Japan

    Gen Hashiguchi

  4. Meiji University, Japan

    Katsuya Kuniyoshi

  5. National Institute for Research in Inorganic Materials, Tsukuba, Ibaraki, 305, Japan

    Yoshio Bando

Authors
  1. Tsunenori Sakamoto
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  2. Kunihiro Sakamoto
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  3. Satoru Nagao
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  4. Gen Hashiguchi
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  5. Katsuya Kuniyoshi
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  6. Yoshio Bando
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Editor information

Editors and Affiliations

  1. IBM Almaden Research Center, San Jose, California, USA

    R. F. C. Farrow  & S. S. P. Parkin  & 

  2. Philips Research Laboratories, Surrey, UK

    P. J. Dobson  & J. H. Neave  & 

  3. Simon Fraser University, Burnaby, Canada

    A. S. Arrott

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© 1987 Springer Science+Business Media New York

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Sakamoto, T., Sakamoto, K., Nagao, S., Hashiguchi, G., Kuniyoshi, K., Bando, Y. (1987). Reflection High-Energy Electron Diffraction Intensity Oscillation — An Effective Tool of Si and GexSi1-x Molecular Beam Epitaxy. In: Farrow, R.F.C., Parkin, S.S.P., Dobson, P.J., Neave, J.H., Arrott, A.S. (eds) Thin Film Growth Techniques for Low-Dimensional Structures. NATO ASI Series, vol 163. Springer, Boston, MA. https://doi.org/10.1007/978-1-4684-9145-6_13

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  • DOI: https://doi.org/10.1007/978-1-4684-9145-6_13

  • Publisher Name: Springer, Boston, MA

  • Print ISBN: 978-1-4684-9147-0

  • Online ISBN: 978-1-4684-9145-6

  • eBook Packages: Springer Book Archive

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