Abstract
Atomic layer epitxy (ALE) is a relatively new method of making low-dimensional overlayer structures of semiconductor and insulator compounds1. ALE makes use of the difference between chemical and physical adsorption of molecular species brought onto the substrate surface as alternate molecular beam or vapor pulses. The growth proceeds stepwise in a layer-by-layer fashion resulting in “digital epitaxy” where film thickness is precisely controlled. It also provides advantages for coating several large-area substrates simultaneously in an industrial environment2.
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Pessa, M. (1987). Atomic Layer Epitaxy of Compound Semiconductors. In: Farrow, R.F.C., Parkin, S.S.P., Dobson, P.J., Neave, J.H., Arrott, A.S. (eds) Thin Film Growth Techniques for Low-Dimensional Structures. NATO ASI Series, vol 163. Springer, Boston, MA. https://doi.org/10.1007/978-1-4684-9145-6_12
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