Radiation Effects in Semiconductor Diodes

Abstract

The properties of semiconductor diodes, like those of other semiconductor devices are greatly influenced by irradiation. Thus, both branches of the V—I curve are changed. However, the magnitude of those changes depends on the type of semiconductor, on the design of the device and on the operating conditions. Accordingly, the radiation stability of diodes is sometimes determined by the degree of deformation of the forward V—I characteristics and sometimes by the changes in reverse characteristics. Therefore, in contrast to transistors, it is difficult to introduce a general criterion for the radiation stability of diodes.