Abstract
The main properties of electron-hole droplets (EHD) in semiconductors are presented, with particular emphasis on collective aspects.
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1)
The theoretical problem of EHD stability is outlined and a simple model is developped to show the effect of band structure on EHD properties. Next, the effect of coupling of electrons to Lo phonon is considered, and comparison with experimental data is given.
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2)
Modifications in EHD of the one electron properties are considered: mass renormalisation, effect of the electron-hole correlation on radiative or Auger lifetime.
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3)
The optical constants of EHD is considered in relation with FIR or IR absorption and light scattering experiments.
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4)
Problem of inhomogeneous electron hole liquid (EHL) is considered: surface energy, perturbation by shallow impurities or iso-electronic impurities. A critical review of the experiments available is given.
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© 1983 Plenum Press, New York
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à la Guillaume, C.B. (1983). Electron-Hole Droplets in Semiconductors. In: Di Bartolo, B. (eds) Collective Excitations in Solids. NATO Advanced Science Institute Series, vol 88. Springer, Boston, MA. https://doi.org/10.1007/978-1-4684-8878-4_17
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DOI: https://doi.org/10.1007/978-1-4684-8878-4_17
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