Abstract
In the majority of cases with which semiconductor physics is concerned, the crystals contain relatively few impurities, which are separated by fairly large distances so that the interaction between them can be neglected, at least in the first approximation. In the heavy doping case, we must allow for the interaction between the impurities themselves, between the impurities and the host atoms, and between the impurities and the structure defects.
Keywords
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.
This is a preview of subscription content, log in via an institution.
Buying options
Tax calculation will be finalised at checkout
Purchases are for personal use only
Learn about institutional subscriptionsPreview
Unable to display preview. Download preview PDF.
Literature
F. A. Trumbore, Bell System Tech. J., 39:205 (1960).
B. I. Boltaks, Diffusion in Semiconductors, Infosearch, London, 1963.
H. Reiss and C. S. Fuller, J. Metals, 8:276 (1956).
H. Reiss, C. S. Fuller, and F. J. Morin, Bell System Tech. J., 35:535 (1956).
J. Teltow, Ann. Phys., 5:63 (1949).
N. B. Hannay (ed.), Semiconductors, Reinhold, New York, 1959, Chap. V.
R. L. Longini and R. F. Greene, Phys. Rev., 102:992 (1956).
W. M. Valenta and C. Ramasastry, Phys. Rev., 106:73 (1957).
Y. Furukawa, J. Phys. Soc. Japan, 16:687 (1961).
W. G. Spitzer, F. A. Trumbore, and R. A. Logan, J. Appl. Phys., 32:1822 (1961).
V. I. Fistul’ and É. M, Omel’yanovskii, FTT, 4:1370 (1962).
V. I. Fistul’ and K. V. Cherkas, FTT, 4:3288 (1962).
É. M. Omel’yanovskii, V. I. Fistul’, and M. G. Mil’vidskii, FTT, 5:921(1963).
É. M. Omel’yanovskii and V. I. Fistul’, Zavodskaya laboratoriya, 30:559 (1964).
G. L. Pearson, J. D. Struthers, and H. C. Theuerer, Phys. Rev., 77:809 (1950).
G. L. Pearson and J. Bardeen, Phys. Rev., 75:865 (1949).
V. I. Fistul’ and M. G. Mil’vidskii, Paper presented at Conf. on Degenerate Semiconductors [in Russian], Moscow, 1962.
V. I. Fistul’, M. G. Mil’vidskii, É. M. Omel’yanovskii, and S. P. Grishina, DAN SSSR, 149(5):1119 (1963).
L. J. Vieland and I. Kudman, J. Phys. Chem. Solids, 24:437 (1965).
V. I. Fistul’, É. M. Omel’yanovskii, O. V. Pelevin, and V. B. Ufimtsev, Izv. AN SSSR, Neorg. materialy, 2:657 (1966).
O. A. Golikova, B. Ya. Moizhes, and A. G. Orlov, FTT, 4:3482 (1962).
A. Golikova, Dissertation for Candidate’s Degree [in Russian], LPI, Leningrad, 1964.
V. I. Fistul’, Doctoral Dissertation [in Russian], Moscow, 1965.
N. G. Karpel’, Zavodskaya laboratoriya, 30:1078 (1964)
J. Black, J. Electrochem. Soc, 8:924 (1964).
C. Elbaum, UFN, 79(3):545 (1963).
M. S. Chupakhin, G. G. Glavin, and V. I. Fistul’, DAN SSSR, 150(5):1059 (1963).
M. S. Chupakhin, G. G. Glavin, and V. I. Fistul’, Collection: Chemical Binding in Semiconductors and Solids [in Russian], “Nauka i tekhnika,” Minsk, 1965.
R. Brown et al., Compound Semiconductors, Reinhold, New York, 1962, Vol. 1, p. 106.
E. Erhard and A. Adler, Z. Metall., 52:529 (1961).
V. M. Glazov and V. N. Vigdorovich, Microhardness of Metals [in Russian], Metallurgizdat, 1962.
H. Kodera, Japan J. Appl. Phys., 2:193 (1963).
J. Takashi and K. Makoto, Japan J. Appl. Phys., 2:194 (1963).
M. G. Mil’vidskii, O. G. Stolyarov, and A. V. Berkova, FTT, 6:3259 (1964).
T. Furuoga, Japan J. Appl. Phys., 1:135 (1962).
W. Bardsley, J. M. Callan, et al., Solid State Electronics, 3:142 (1961).
W. A. Tiller and J. W. Rutter, Can. J. Phys., 31:15 (1953).
V. V. Voronkov, FTT, 6:2984 (1964).
M. G. Mil’vidskii and V. V. Voronkov, FTT, 6:3736 (1964).
M. G. Mil’vidskii and S. P. Grishina, FTT, 6:483 (1964).
M. G. Mil’vidskii, V. I. Fistul’, and S. P. Grishina, FTT, 6:2762 (1964).
W. C. Dash, J. Appl. Phys., 27:1153 (1956)
V. G. Fomin, M. G. Mil’vidskii, S. P. Grishina, N. S. Belyatskaya, and M. A. Gurevich, Kristallografiya, 9:219 (1964).
V. I. Fistul’ and A. M. Agaev, FTT, 7:3042 (1965).
T. P. Brody, J. Appl. Phys., 33:100 (1962).
N. A. Belova, Radiotekhnika i élektronika, 8:2091 (1963).
N. A. Belova, Dissertation for Candidate’s Degree [in Russian], Radio Engineering and Electronics Institute, Academy of Sciences of the USSR, Moscow, 1964.
Ya. I. Frenkel’, Kinetic Theory of Liquids [in Russian], Izd. AN SSSR, 1945.
V. I. Danilov, Structure and Crystallization of Liquids [in Russian], Izd. AN UkrSSR, 1956.
E. G. Shvidkovskii, Some Problems in the Viscosity of Molten Metals [in Russian], Gostekhizdat, 1955.
N. S. Greengrich, Uspekhi khimii, Vol. 15, No. 3 (1946).
G. M. Martynkevich, Dissertation for Candidate’s Degree [in Russian], Moscow State University, Moscow, 1961.
A. N. Nesmeyanov, Vapor Pressure of Chemical Elements [in Russian], Izd. AN SSSR, 1961.
I. B. Borovskii and N. P. Il’in, Zavodskaya laboratoriya, 23, No. 9 (1957).
Author information
Authors and Affiliations
Rights and permissions
Copyright information
© 1969 Plenum Press
About this chapter
Cite this chapter
Fistul’, V.I. (1969). Behavior of Impurities in Heavily Doped Semiconductors. In: Heavily Doped Semiconductors. Monographs in Semiconductor Physics, vol 1. Springer, Boston, MA. https://doi.org/10.1007/978-1-4684-8821-0_6
Download citation
DOI: https://doi.org/10.1007/978-1-4684-8821-0_6
Publisher Name: Springer, Boston, MA
Print ISBN: 978-1-4684-8823-4
Online ISBN: 978-1-4684-8821-0
eBook Packages: Springer Book Archive