Abstract
The effect of boron additions on the rate of carburization of molten silicon and on the growth of the carbide layer at the graphite-melt interface has been investigated. It is shown that on the introduction of 14 wt.% B the thickness of the carbide layer at the interface increases and so does the carbon content in the melt.
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Shurshakov, A.N., Dergunova, V.S., Meerson, G.A., Sizov, B.A. (1974). Investigation of the Effect of Boron Additions on the Carburization of Silicon. In: Samsonov, G.V. (eds) Refractory Carbides. Studies in Soviet Science. Springer, New York, NY. https://doi.org/10.1007/978-1-4684-8598-1_14
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DOI: https://doi.org/10.1007/978-1-4684-8598-1_14
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