Abstract
The monolithic CCD type sensors, which are currently under development for high performance infrared detection and imaging systems, utilize extrinsic indium or gallium doped silicon substrates. Considerations of detector operating temperature and sensitivity require that residual shallow acceptor impurities, such as boron, in these highly doped silicon substrates be compensated as closely as possible by donor impurities. Highly uniform and accurately known phosphorus concentrations can be introduced into the silicon lattice by neutron transmutation, making the technique attractive for producing precisely compensated, p-extrinsic silicon detector material of high infrared sensitivity.
Supported by DARPA Contract DAAG53–76-C-0170 and monitored by Night Vision and Electro-Optics Laboratories, Fort Belvoir, VA 22060.
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References
R. N. Thomas, T. T. Braggins, H. M. Hobgood, W. J. Takei, and H. C. Nathanson, paper presented at 25th IRIS Detector Specialty Group Meeting, March 1977, Colorado Springs, CO.
R. N. Thomas, T. T. Braggins, H. M. Hobgood, W. J. Takei, and H. C. Nathanson, J. Appi. Phys. 49, 2811 (1978).
W. G. Pfann, Zone Melting, 2nd Edition (John Wiley and Sons, New York, 1966).
G. Lucovsky, Solid State Commun. 299 (1965).
R. A. Messinger and J. S. Blakemore, Phys. Rev. B4,.1873 (1971).
H. J. Hrostowski and R. H. Kaiser, J. Phys. Chem. Solids, 4, 148 (1958).
R. Baron, M. H. Young, J. K. Neeland, and O. J. Marsh, Appi. Phys. Lett. 30, 594 (1977).
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© 1979 Plenum Press, New York
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Hobgood, H.M., Braggins, T.T., Swartz, J.C., Thomas, R.N. (1979). Role of Neutron Transmutation in the Development of High Sensitivity Extrinsic Silicon IR Detector Material. In: Meese, J.M. (eds) Neutron Transmutation Doping in Semiconductors. Springer, Boston, MA. https://doi.org/10.1007/978-1-4684-8249-2_7
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DOI: https://doi.org/10.1007/978-1-4684-8249-2_7
Publisher Name: Springer, Boston, MA
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