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Emergent Process Methods for High-Technology Ceramics pp 371–380Cite as

A Morphological Study of Silicon Carbide Prepared by Chemical Vapor Deposition

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Part of the book series: Materials Science Research ((MSR,volume 17))

Abstract

Surface morphologies of SiC deposits obtained via chemical vapor deposition (CVD) were studied as functions of substrate surface temperature and the concentration of the silicon and carbon source material, methyltrichlorosilane (MTS).Substrates of graphite and α-SiC crystals were used. Explanations of the observed morphologies on graphite substrates and their marked changes with temperature are given in terms of chemical kinetics and mass transport arguments. The results of thermodynamic calculations were used to help explain the observed morphologies of the deposits on α-SiC substrates.

This research was supported by the NASA Lewis Research Center, Grant No. NAG3-177.

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References

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Author information

Authors and Affiliations

  1. Materials Research Laboratory, The Pennsylvania State University, 16802, University Park, PA, USA

    P. Tsui & K. E. Spear

Authors
  1. P. Tsui
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  2. K. E. Spear
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Editor information

Editors and Affiliations

  1. School of Engineering, North Carolina State University, Raleigh, North Carolina, USA

    Robert F. Davis , Hayne Palmour III  & Richard L. Porter ,  & 

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© 1984 Plenum Press, New York

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Tsui, P., Spear, K.E. (1984). A Morphological Study of Silicon Carbide Prepared by Chemical Vapor Deposition. In: Davis, R.F., Palmour, H., Porter, R.L. (eds) Emergent Process Methods for High-Technology Ceramics. Materials Science Research, vol 17. Springer, Boston, MA. https://doi.org/10.1007/978-1-4684-8205-8_28

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  • DOI: https://doi.org/10.1007/978-1-4684-8205-8_28

  • Publisher Name: Springer, Boston, MA

  • Print ISBN: 978-1-4684-8207-2

  • Online ISBN: 978-1-4684-8205-8

  • eBook Packages: Springer Book Archive

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