A Morphological Study of Silicon Borides Prepared by CVD

Dirkx, R. R.; Spear, K. E.

doi:10.1007/978-1-4684-8205-8_27

R. R. Dirkx² &
K. E. Spear²

Part of the book series: Materials Science Research ((MSR,volume 17))

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Abstract

Compounds in the silicon-boron system have been prepared by chemical vapor deposition in the form of refractory protective coatings. Morphological changes which take place as a function of substrate temperature, total pressure, reactant gas composition and carrier gas composition were investigated. Marked changes in film morphology were observed as these CVD parameters were systematically varied.

This research was supported by the U.S. National Science Foundation, Division of materials Research, Grant No. DMR-8109260

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Authors and Affiliations

Materials Research Laboratory, The Pennsylvania State University, 16802, University Park, PA, USA
R. R. Dirkx & K. E. Spear

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R. R. Dirkx
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K. E. Spear
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Editors and Affiliations

School of Engineering, North Carolina State University, Raleigh, North Carolina, USA
Robert F. Davis , Hayne Palmour III & Richard L. Porter , &

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Dirkx, R.R., Spear, K.E. (1984). A Morphological Study of Silicon Borides Prepared by CVD. In: Davis, R.F., Palmour, H., Porter, R.L. (eds) Emergent Process Methods for High-Technology Ceramics. Materials Science Research, vol 17. Springer, Boston, MA. https://doi.org/10.1007/978-1-4684-8205-8_27

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DOI: https://doi.org/10.1007/978-1-4684-8205-8_27
Publisher Name: Springer, Boston, MA
Print ISBN: 978-1-4684-8207-2
Online ISBN: 978-1-4684-8205-8
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