Abstract
Silicon carbide was generated by pyrolysis of gas mixtures consisting of silicon tetrachloride, hydrogen, and organic vapors, such as acetone, on fine tungsten wires resistance-heated at 1500°C. Prominent two-dimensional structure was demonstrated for the 220 reflection. All other lines were of the normal three-dimensional lattice type.
Elevation of less than 100° in the pyrolysis temperature eliminated the two-dimensional reflection, and simultaneously changed the visible crystallite size.
Specialized techniques were used to generate the silicon carbide deposits and also to examine the structure of these deposits by X-ray diffraction to obtain lines from only the silicon carbide while ignoring the tungsten wire core. Diffraction techniques include offset collimation and vertical integration.
All rights reserved by the U.S. Air Force, Air Force Materials Laboratory. This research was done at Wright-Patterson Air Force Base under Task numbers 735101 and 734003.
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Prickett, R.L., Hough, R.L. (1966). Generation of a Two-Dimensional Silicon Carbide Lattice. In: Mallett, G.R., Fay, M.J., Mueller, W.M. (eds) Advances in X-Ray Analysis. Springer, Boston, MA. https://doi.org/10.1007/978-1-4684-7633-0_12
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