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Phase Transitions in Group III–V and II–VI Semiconductors at High Pressure

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High-Pressure Science and Technology

Abstract

Compounds of the group III–V and II–VI elements are technologically important. As a result they have been extensively studied, both theoretically and experimentally. There have been several structural studies of the high pressure phases, pioneered by Jamieson [1,2], but above ~ 100 kbar only a few studies of electrical resistance have been reported. Several “transitions” based on abrupt changes in resistivity have been useful as fixed points.

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Author notes

  1. C. Y. Liu

    Present address: San José Laboratory, I.B.M., San José, Calif, USA

Authors and Affiliations

  1. University of Maryland, College Park, Maryland, USA

    S. C. Yu, C. Y. Liu & I. L. Spain

  2. Naval Research Laboratory, Washington, D.C., USA

    E. F. Skelton

Authors
  1. S. C. Yu
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  2. C. Y. Liu
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  3. I. L. Spain
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  4. E. F. Skelton
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Editor information

Editors and Affiliations

  1. University of Colorado, Boulder, Colorado, USA

    K. D. Timmerhaus  & M. S. Barber  & 

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© 1979 Springer Science+Business Media New York

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Yu, S.C., Liu, C.Y., Spain, I.L., Skelton, E.F. (1979). Phase Transitions in Group III–V and II–VI Semiconductors at High Pressure. In: Timmerhaus, K.D., Barber, M.S. (eds) High-Pressure Science and Technology. Springer, Boston, MA. https://doi.org/10.1007/978-1-4684-7470-1_33

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  • DOI: https://doi.org/10.1007/978-1-4684-7470-1_33

  • Publisher Name: Springer, Boston, MA

  • Print ISBN: 978-1-4684-7472-5

  • Online ISBN: 978-1-4684-7470-1

  • eBook Packages: Springer Book Archive

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