Patterned Quantum Well Semiconductor Lasers

Abstract

Semiconductor injection lasers exhibiting very low threshold currents (less than 1 mA) are required for applications involving the integration of a large number of lasers on a single chip due to their low power consumption. Furthermore, low-threshold injection lasers are charcterized by higher switching speeds because of the lower carrier densities necessary for reaching their thresholds [1]. Thus, such lasers are very attractive in applications requiring a large number of high speed lasers, e.g., computer optical interconnects [2] and other optoelectronic integrated circuit (OEIC) schemes.