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Optical Spectroscopy on Two- and One-Dimensional Semiconductor Structures

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Book cover Optical Switching in Low-Dimensional Systems

Part of the book series: NATO ASI Series ((NSSB,volume 194))

Abstract

Due to the enormous progress of epitaxial techniques many semiconductor materials can nowadays be fabricated with a previously unattained degree of perfection. In particular molecular beam epitaxy (MBE) and metalorganic vapour phase epitaxy (MOVPE) have been developed during the last decade.1,2 They allow the growth of high quality sequences of III-V-semiconductor materials. With these methods the growth can be controlled down to the level of individual atomic layers.3

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Authors and Affiliations

  1. 4. Physikalisches Institut, Universität Stuttgart, Pfaffenwaldring 57, D-7000, Stuttgart 80, Germany

    A. Forchel, U. Cebulla, H. Leier & B. E. Maile

  2. W. Schottky Institut, Garching, Germany

    G. Tränkle

Authors
  1. A. Forchel
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  2. G. Tränkle
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  3. U. Cebulla
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  4. H. Leier
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  5. B. E. Maile
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Editors and Affiliations

  1. Institute for Theoretical Physics, University of Frankfurt, Frankfurt, Federal Republic of Germany

    H. Haug  & L. Bányai  & 

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© 1989 Plenum Press, New York

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Forchel, A., Tränkle, G., Cebulla, U., Leier, H., Maile, B.E. (1989). Optical Spectroscopy on Two- and One-Dimensional Semiconductor Structures. In: Haug, H., Bányai, L. (eds) Optical Switching in Low-Dimensional Systems. NATO ASI Series, vol 194. Springer, Boston, MA. https://doi.org/10.1007/978-1-4684-7278-3_35

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  • DOI: https://doi.org/10.1007/978-1-4684-7278-3_35

  • Publisher Name: Springer, Boston, MA

  • Print ISBN: 978-1-4684-7280-6

  • Online ISBN: 978-1-4684-7278-3

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