Abstract
The transient behavior of absorption saturation in GaAs/AlGaAs multiple quantum wells is experimentally studied under conditions where stimulated emission governs the absorption recovery. It is found that stimulated recombination is strongly dependent on temperature in the range 80-160 K and that the spectral shape of the absorption edge in the small gain regime is much steeper than expected from uncorrelated electron and hole population distributions. These features are interpreted as a manifestation of the strong electron-hole correlations theoretically expected in 2D structures. Finally a possible application of stimulated recombination to ultrafast optical switching is presented.
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© 1989 Plenum Press, New York
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Oudar, J.L. (1989). Excitonic Enhancement of Stimulated Recombination in GaAs/AlGaAs Multiple Quantum Wells. In: Haug, H., Bányai, L. (eds) Optical Switching in Low-Dimensional Systems. NATO ASI Series, vol 194. Springer, Boston, MA. https://doi.org/10.1007/978-1-4684-7278-3_31
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DOI: https://doi.org/10.1007/978-1-4684-7278-3_31
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