Abstract
When a direct semiconductor is irradiated by a laser beam in the transparency region, the exciton line blue shifts. This shift, which has been observed(1) in two and three dimensions, disappears when the laser is turned off. This property made the exciton stark shift particularly attractive as it can be used for ultrafast optical gates. Very recently, another nice aspect of the exciton stark shift has been predicted(2) and verified experimentally(3): under laser irradiation, the exciton line not only shifts but also splits. Exciton splitting has been produced by uniaxial stress or magnetic field, but it is the first time that the light is used to produce such an effect.
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References
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© 1989 Plenum Press, New York
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Monique, Combescot, R. (1989). Exciton Stark Shift : Biexcitonic Origin and Exciton Splitting. In: Haug, H., Bányai, L. (eds) Optical Switching in Low-Dimensional Systems. NATO ASI Series, vol 194. Springer, Boston, MA. https://doi.org/10.1007/978-1-4684-7278-3_16
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DOI: https://doi.org/10.1007/978-1-4684-7278-3_16
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