Abstract
Semiconductor quantum wells (QW) have recently attracted much attention because of their electronic transport and optoelectronic properties[1]. The confinement of photocarriers in layers which thickness, Lz, is smaller than the bulk material Bohr radius, ao, reinforces the excitonic behavior, resulting novel nonlinear[2] and electro-optical properties[3]. In this talk we report recent investigations performed in our group on two topics; The extreme low and high intensity limit studies of AC-Stark Effect and the investigation of the dynamics of excitonic absorption in the infrared band gap InGaAs quantum wells. The first work was performed by W.H. Knox, J.B. Stark, D.S. Chemla, D.A.B. Miller, and S. Schmitt-Rink[4], and the second by M. Wegener, I. Bar Joseph, G. Sucha, M.N. Islam and D.S. Chemla[5].
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References
For recent reviews see the two IEEE J. Quant. Electron, special issues on Quantum Wells and Superlattices; QE-22 1609–1921 (1986) D.S. Chemla and A. Pinczuk ed. and QE-24 1579-1791 (1988) J. Coleman ed.
For recent reviews see, D.S. Chemla, D.A.B. Miller, S. Schmitt-Rink in “Optical Nonlinearities and Instabilities in Semiconductors” H. Haug ed. Academic Press NY (1988), and S. Schmitt-Rink, D.S. Chemla, D.A.B. Miller, Advances in Physics (1989).
For recent reviews see, D.A.B. Miller, D.S. Chemla, S. Schmitt-Rink in “Optical Nonlinearities and Instabilities in Semiconductors” H. Haug ed. Academic Press NY (198
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M.N. Islam, G. Sucha, I. Bar-Joseph, M. Wegener, J.P. Gordon, D.S. Chemla to be published.
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© 1989 Plenum Press, New York
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Chemla, D.S. (1989). Femtosecond Spectroscopy of Optically Excited Quantum Well Structures. In: Haug, H., Bányai, L. (eds) Optical Switching in Low-Dimensional Systems. NATO ASI Series, vol 194. Springer, Boston, MA. https://doi.org/10.1007/978-1-4684-7278-3_12
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DOI: https://doi.org/10.1007/978-1-4684-7278-3_12
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