Summary
Novel power MOSFETs suitable for the power range below 10 kW are faster than bipolar power transistors and need less input current. Although easy to use, they also have some inherent problems. New advanced devices such as MOS thyristors, MOS Darlingtons, opto-MOS thyristors and triacs are now feasible in which MOS and bipolar structures are functionally integrated to good advantage.
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© 1982 Plenum Press, New York
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Tihanyi, J. (1982). Power Mosfets. In: Sittig, R., Roggwiller, P. (eds) Semiconductor Devices for Power Conditioning. Earlier Brown Boveri Symposia. Springer, Boston, MA. https://doi.org/10.1007/978-1-4684-7263-9_13
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DOI: https://doi.org/10.1007/978-1-4684-7263-9_13
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