Summary
Despite its age, the bipolar transistor is still one of the major switching components used for power electronics applications. For those cases where controlled turn-off is required, it is probably the dominant component. In recent years this dominance has been challenged by the emergence of power MOSFETs and GTOs as possible alternatives for power-switching applications. In this paper the three devices are compared. The bipolar receives the most attention, with particular emphasis on performance limitations imposed by the physical properties of the starting material (silicon) and processing techniques. The failure modes and turn-off behavior are also considered. The paper concludes with a discussion of possible future trends in the design and fabrication of power bipolar transistors.
This is a preview of subscription content, log in via an institution to check access.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
Preview
Unable to display preview. Download preview PDF.
References
R.M. Scarlett and W. Shockley, “Secondary Breakdown and Hot Spots in Power Transistors,” IEEE Int. Conv. Rec., 11, Part III (1963) 3–13.
P.L. Hower and V.G.K. Reddi, “Avalanche Injection and Second Breakdown in Transistors,” IEEE Trans. Electron Devices, ED-17 (April 1970) 320–355.
L.E. Clark, “High Current-Density Beta Diminution,” IEEE Trans. Electron Devices, ED-17 (September 1970) 661–666.
J. Olmstead et al., “High-Level Current Gain in Bipolar Power Transistors,” RCA Rev. 32 (1971) 222–246.
Y. Nakatani et al., “A New Ultra-High Speed High-Voltage Switching Transistor,” Proc. Powercon 7, Paper J3, San Diego, 1980.
T.C. New et al., “High Power Gate-Controlled Switch,” IEEE Trans. Electron Devices, ED-17 (September 1970) 706–710.
H.W. Becke and J.M. Neilson, “A New Approach to the Design of Gate Turn-Off Thyristors,” IEEE Power Elec. Spec. Conf., Los Angeles, 1975, 292–299.
P.L. Hower, “A Comparison of Bipolar and Field-Effect Transistors as Power Switches,” IEEE Ind. Appl. Soc. Conf. Record-1980, Cinncinatti, 682–688.
P.L. Hower, “Application of a Charge-Control Model to High-Voltage Power Transistors,” IEEE Trans. Electron Devices, ED-23 (August 1976) 863–870.
H. Schlangenotto and W. Gerlach, “On the Effective Carrier Lifetime in p-s-n Rectifiers at High Injection Level,” Solid-State Elec, 12 (1969) 267–275.
N. Oh-uchi et al., “A New Silicon Heterojunction Transistor Using Doped SIPOS,” IEDM Tech. Digest (1979) Washington, 522–524.
P.L. Hower, “Optimum Design of Power Transistor Switches,” IEEE Trans. Electron Devices, ED-20 (April 1973) 462–435.
P.L. Hower and W.G. Einthoven, “Emitter Current-Crowding in High-Voltage Transistors,” IEEE Trans. Electron Devices, ED-25 (April 1973) 465–471.
P.L. Hower, “A New Method of Characterizing the Switching Performance of Power Transistors,” IEEE Ind. App. Soc. Conf. Record-1978, Toronto, 1978, 1044–1049.
K.S. Tarneja and P.L. Hower, “A New High Power Transistor,” IEEE Ind. App. Soc. Conf. Record-1981, Philadelphia.
E.D. Wolley, “Gate Turn-Off in p-n-p-n Devices,” IEEE Trans. Electron Devices, ED-13 (July 1966) 590–597.
P.L. Hower, “A Model for Turn-Off in Bipolar Transistors,” IEDM Tech. Digest (1980) Washington, 289–292.
D.L. Blackburn and D.W. Berning, “Some Effects of Base Current on Transistor Switching and Reverse-Bias Second Breakdown,” IEDM Technical Digest (1978) Washington, 671–675.
Author information
Authors and Affiliations
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 1982 Plenum Press, New York
About this chapter
Cite this chapter
Hower, P.L. (1982). Bipolar Transistors. In: Sittig, R., Roggwiller, P. (eds) Semiconductor Devices for Power Conditioning. Earlier Brown Boveri Symposia. Springer, Boston, MA. https://doi.org/10.1007/978-1-4684-7263-9_12
Download citation
DOI: https://doi.org/10.1007/978-1-4684-7263-9_12
Publisher Name: Springer, Boston, MA
Print ISBN: 978-1-4684-7265-3
Online ISBN: 978-1-4684-7263-9
eBook Packages: Springer Book Archive