Abstract
Diamond has the potential to become an important high temperature electronic material because it has the highest thermal conductivity, electron velocity and breakdown voltage of any semiconductorl. Additionally, the vapour phase deposition techniques offer the promise of thin film devices and controlled impurity contents2. However, a number of problems must first be resolved, such as an improved n-type doping facility and a further development of the vapour deposition process. To this end, the electronic structure of diamond, its vacancies, interstitials, substitutional impurities and surfaces is reviewed. It is noted that vacancies mediate atomic diffusion, that P is a shallow but low solubility donor and that hydrogen abstraction from the hydrogenated diamond surface is often the rate-limiting step in diamond deposition.
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Robertson, J. (1991). Electronic Structure of Diamond, Its Defects and Surfaces. In: Clausing, R.E., Horton, L.L., Angus, J.C., Koidl, P. (eds) Diamond and Diamond-like Films and Coatings. NATO ASI Series, vol 266. Springer, Boston, MA. https://doi.org/10.1007/978-1-4684-5967-8_3
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