Abstract
We have investigated the optical absorption in doped semiconductors via the ground-state H2 +→H2 o excitation donor-pair transition with application to Si:P. A correlated scheme is used for the H2- like impurity molecule1. The many-valley characteristic of the host silicon is taken into account in the calculation2.
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References
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© 1990 Plenum Press, New York
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Ferreira da Silva, A., de Brito Mota, F. (1990). Optical Absorption in Disordered Semiconductor Systems: Application to the Correlated Phosphorus-Doped Silicon. In: Baeriswyl, D., Bishop, A.R., Carmelo, J. (eds) Applications of Statistical and Field Theory Methods to Condensed Matter. NATO ASI Series, vol 218. Springer, Boston, MA. https://doi.org/10.1007/978-1-4684-5763-6_28
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DOI: https://doi.org/10.1007/978-1-4684-5763-6_28
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