Skip to main content

Part of the book series: NATO ASI Series ((NSSB,volume 214))

Abstract

In the past few years a great deal of new physics has emerged from the examination of structures made in semi-conducting materials with dimensions on a nano-metric scale -some examples are the observation of Aranhov-Bohm oscillations in a ring, the quantised resistance observed with point contacts and in wires with restrictions and the continuing saga of the photoluminescence from quantum dots and the allied hope of more efficient laser performance.

This is a preview of subscription content, log in via an institution to check access.

Access this chapter

eBook
USD 16.99
Price excludes VAT (USA)
  • Available as PDF
  • Read on any device
  • Instant download
  • Own it forever
Softcover Book
USD 54.99
Price excludes VAT (USA)
  • Compact, lightweight edition
  • Dispatched in 3 to 5 business days
  • Free shipping worldwide - see info

Tax calculation will be finalised at checkout

Purchases are for personal use only

Institutional subscriptions

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. R.Cheung, S.Thoms, I.Mclntyre, C.D.W.Wilkinson and S.P.Beaumont,’Passivation of donors in electron beam defined nanostructures after methane/hydrogen reactive ion etching’, J.Vac.Sci.Techno1. 6, 1911, 1988

    Article  Google Scholar 

  2. G.F.Doughty, S.Thoms, R.Cheung and C.D.W.Wilkinson,Dry etching damage to Gallium Arsenide and Indium Phosphide’, IPAT 87 Proceedings, 284, 1987

    Google Scholar 

  3. M.Watt,C.M.Sotomayor-Torres,R.Cheung,C.D.W.Wilkinson, H.E.G.Arnot and S.P.Beaumont ‘Raman scattering of reactive ion etched GaAs’,J.Mod.Optics, 35, 365, 1988

    Article  ADS  Google Scholar 

  4. S.Thoms,S.P.Beaumont,C.D.W.Wilkinson,J.Frost and C.R.Stanley,’ Ultrasmall Device Fabrication using dry etching of GaAs’, Microelectronic Engineering, 5, 249. 1986

    Article  Google Scholar 

  5. R.Cheung,Y.H.Lee,C.M.Knoedler,K.Y.Lee,T.P.Smith III and D.P.Kern, ‘Sidewall damage in n+ GaAs quantum wires from reactive ion etching’, Appl. Phys. Lettrs., 54, 2130, 1989

    Article  ADS  Google Scholar 

  6. R.Cheung,A.Birnie,J.N.Chapman and C.D.W.Wilkinson, ‘Evaluation of dry etch damage by direct TEM observation’ to be published in Proc.Microcircuit Engineering 1989 (Cambridge).

    Google Scholar 

Download references

Author information

Authors and Affiliations

Authors

Editor information

Editors and Affiliations

Rights and permissions

Reprints and permissions

Copyright information

© 1990 Plenum Press, New York

About this chapter

Cite this chapter

Wilkinson, C.D.W., Beaumont, S.P. (1990). Dry-Etching Damage in Nano-Structures. In: Beaumont, S.P., Torres, C.M.S. (eds) Science and Engineering of One- and Zero-Dimensional Semiconductors. NATO ASI Series, vol 214. Springer, Boston, MA. https://doi.org/10.1007/978-1-4684-5733-9_2

Download citation

  • DOI: https://doi.org/10.1007/978-1-4684-5733-9_2

  • Publisher Name: Springer, Boston, MA

  • Print ISBN: 978-1-4684-5735-3

  • Online ISBN: 978-1-4684-5733-9

  • eBook Packages: Springer Book Archive

Publish with us

Policies and ethics