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As-Deposited Superconducting Y-Ba-Cu-O Thin Films on Si, SiO2, GaAs and Ni/Cu Substrates by High Pressure DC Sputtering Process

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Science and Technology of Thin Film Superconductors

Abstract

The superconducting Y-Ba-Cu-O thin films on Si, SiO 2 , GaAs and Ni/Cu substrates have been reproducibly prepared by high pressure DC sputtering process without further annealing treatment. The superconductivity of the films is Tc(onset)=95K and Tc(zero)=70K. The targets were Y-Ba-Cu-O compounds made by solid state reaction. The substrate temperature is lower than 450°C. X-ray analysis indicates that the 0.6~2μm films consist of predomintly the orthorhombic superconducting phase of YBa 2 Cu 3 Ox with traces of CuO. The effect of processing parameters on the superconductivity of the films will be discussed.

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© 1989 Plenum Press, New York

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Lin, R.J., Wu, P.T. (1989). As-Deposited Superconducting Y-Ba-Cu-O Thin Films on Si, SiO2, GaAs and Ni/Cu Substrates by High Pressure DC Sputtering Process. In: McConnell, R.D., Wolf, S.A. (eds) Science and Technology of Thin Film Superconductors. Springer, Boston, MA. https://doi.org/10.1007/978-1-4684-5658-5_18

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  • DOI: https://doi.org/10.1007/978-1-4684-5658-5_18

  • Publisher Name: Springer, Boston, MA

  • Print ISBN: 978-1-4684-5660-8

  • Online ISBN: 978-1-4684-5658-5

  • eBook Packages: Springer Book Archive

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