Abstract
Following the first reports of RHEED intensity oscillations during molecular beam epitaxy (MBE) of GaAs[l,2] this phenomenon has been studied extensively but the analysis of the intensity oscillations and their physical origin are still a matter of debate[3]. Most of this work was done under near-equilibrium conditions. On the other hand, well-pronounced RHEED intensity oscillations have been observed in Si and Ge molecular beam homo-epitaxy far from equilibrium[4–6]. In the case of Si and Ge the configuration-dependent reactive-incorporation (CDRI) model[7] is clearly not applicable. Instead, the limited diffusion length-induced two-dimensional nucleation model gives a good description of the temperature dependence of the damping of the oscillations[8]. This has also been confirmed by computer simulations[9].
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© 1988 Plenum Press, New York
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Lilienkamp, G., Kozioł, C., Bauer, E. (1988). RHEED Intensity Oscillations in Metal Epitaxy. In: Larsen, P.K., Dobson, P.J. (eds) Reflection High-Energy Electron Diffraction and Reflection Electron Imaging of Surfaces. NATO ASI Series, vol 188. Springer, Boston, MA. https://doi.org/10.1007/978-1-4684-5580-9_35
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DOI: https://doi.org/10.1007/978-1-4684-5580-9_35
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