Abstract
Reflection high energy electron diffraction (RHEED) is a powerful tool for the study of surface processes. Because of the glancing geometry of RHEED, the high energy electrons only interact strongly with the first few layers of material. The glancing angle makes it exceedingly sensitive to surface morphology. However, the strong scattering of the electrons by the atomic potentials causes strong dynamical (multiple) scattering events to occur. This makes the diffracted intensities difficult to interpret.
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© 1988 Plenum Press, New York
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Pukite, P.R., Cohen, P.I., Batra, S. (1988). The Contribution of Atomic Steps to Reflection High Energy Electron Diffraction from Semiconductor Surfaces. In: Larsen, P.K., Dobson, P.J. (eds) Reflection High-Energy Electron Diffraction and Reflection Electron Imaging of Surfaces. NATO ASI Series, vol 188. Springer, Boston, MA. https://doi.org/10.1007/978-1-4684-5580-9_31
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DOI: https://doi.org/10.1007/978-1-4684-5580-9_31
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