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Theory of RHEED by Reconstructed Surfaces

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Part of the book series: NATO ASI Series ((NSSB,volume 188))

Abstract

Surface reconstructions are very well known in semiconductor physics. In particular the (001) surface of GaAs exhibits a wide variety of reconstructions, especially during MBE growth. For example, 2×4, 3×1 and c(4x4) reconstructions have all been observed under appropriate conditions[1,2]. Since RHEED is widely used to monitor MBE growth[3,4,5] it is important to understand the effect of the reconstruction on the RHEED intensities. It turns out that such understanding can be of great help in deducing the atomic geometry of surface reconstructions.

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References

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© 1988 Plenum Press, New York

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Knibb, M.G., Maksym, P.A. (1988). Theory of RHEED by Reconstructed Surfaces. In: Larsen, P.K., Dobson, P.J. (eds) Reflection High-Energy Electron Diffraction and Reflection Electron Imaging of Surfaces. NATO ASI Series, vol 188. Springer, Boston, MA. https://doi.org/10.1007/978-1-4684-5580-9_3

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  • DOI: https://doi.org/10.1007/978-1-4684-5580-9_3

  • Publisher Name: Springer, Boston, MA

  • Print ISBN: 978-1-4684-5582-3

  • Online ISBN: 978-1-4684-5580-9

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