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Reflection High-Energy Electron Diffraction and Reflection Electron Imaging of Surfaces pp 397–417Cite as

RHEED Intensity Oscillations During MBE Growth of III-V Compounds - An Overview

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Part of the book series: NATO ASI Series ((NSSB,volume 188))

Abstract

Reflection high energy electron diffraction (RHEED) has proved to be a very versatile technique for growth and surface studies of semiconductor films prepared by molecular beam epitaxy (MBE). The combination of the forward scattering geometry of RHEED with the arrangement of MBE in which the atomic and molecular beams are incident almost normally on the substrate enables diffraction features to be monitored continuously during growth.

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Author information

Authors and Affiliations

  1. Philips Research Laboratories, Redhill, Surrey, RH1 5HA, UK

    J. Zhang & P. J. Dobson

  2. Department of Physics, Imperial College of Science and Technology, South Kensington, London, SW7 2AZ, UK

    B. A. Joyce, J. H. Neave & J. Zhang

Authors
  1. B. A. Joyce
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  2. J. H. Neave
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  3. J. Zhang
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  4. P. J. Dobson
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Editor information

Editors and Affiliations

  1. Philips Research Laboratories, Eindhoven, The Netherlands

    P. K. Larsen

  2. Philips Research Laboratories, Redhill, UK

    P. J. Dobson

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© 1988 Plenum Press, New York

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Joyce, B.A., Neave, J.H., Zhang, J., Dobson, P.J. (1988). RHEED Intensity Oscillations During MBE Growth of III-V Compounds - An Overview. In: Larsen, P.K., Dobson, P.J. (eds) Reflection High-Energy Electron Diffraction and Reflection Electron Imaging of Surfaces. NATO ASI Series, vol 188. Springer, Boston, MA. https://doi.org/10.1007/978-1-4684-5580-9_29

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  • DOI: https://doi.org/10.1007/978-1-4684-5580-9_29

  • Publisher Name: Springer, Boston, MA

  • Print ISBN: 978-1-4684-5582-3

  • Online ISBN: 978-1-4684-5580-9

  • eBook Packages: Springer Book Archive

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