Abstract
GaAs-GaAIAs superlattices(SL) have been recently developed, stimulated by their interest in modern electronics. In most SL the GaAlAs layer is large (more than 40 Å) so that the tunneling through the barrier is weak and the SL behaves as an array of quantum wells (QW). However, progress in molecular beam epitaxy (MBE) has now made possible the formation of ultrathin GaAlAs layer where the abrupt interface is of the order of an atomic monolayer1,2. In such a case, the conduction electrons tunnel through the GaAlAs barrier and propagate along the direction perpendicular to the layers, in a superlattice conduction miniband common to both barrier and well layers. This behavior of the electronic transport has been recently observed3, and electrical characterization techniques such as capacitance-voltage (C-V), capacitance transient (C-t) and Deep Level Transient Spectroscopy (DLTS) have been successfully applied to SL4,5,6,7, in order to probe the materials.
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Vuillaume, D., Stiévenard, D. (1988). Defects Characterization in GaAs-GaAlAs Superlattices. In: Fong, C.Y., Batra, I.P., Ciraci, S. (eds) Properties of Impurity States in Superlattice Semiconductors. NATO ASI Series, vol 183. Springer, Boston, MA. https://doi.org/10.1007/978-1-4684-5553-3_9
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