Abstract
Very high quality Ga0.47In0.53 As-InP heterojunctions, quantum wells and superlattices have been grown by low pressure metalorganic chemical vapor deposition (LP-MOCVD). Excitation spectroscopy shows evidence of strong and well resolved exciton peaks in the luminescence and excitation spectra of GalnAs-InP quantum wells. Optical absorption shows roomtemperature exciton in GalnAs-InP superlattices (M. Razeghi et al., 1983)1. Quantum wells as thin as 8 A with a photoluminescence linewidth of 9 meV have been grown.
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© 1988 Plenum Press, New York
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Razeghi, M., Maurel, P., Omnes, F. (1988). Interface Characterization of GaInAs-InP Superlattices Grown by Low Pressure Metalorganic Chemical Vapor Deposition. In: Fong, C.Y., Batra, I.P., Ciraci, S. (eds) Properties of Impurity States in Superlattice Semiconductors. NATO ASI Series, vol 183. Springer, Boston, MA. https://doi.org/10.1007/978-1-4684-5553-3_5
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DOI: https://doi.org/10.1007/978-1-4684-5553-3_5
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