Abstract
The stability, growth, structural phase transitions, and the electronic properties of strained SiGe alloy and superlattices have been investigated by using self-consistent field pseudopotential method. The equilibrium structures of Sin/Gen (n ≤ 6) superlattices pseudomorphically restricted to the Si(001) surface are determined, and their formation enthalpies are calculated. A simple model for the formation enthalpy of superlattices is developed, whereby the activation barrier of the misfit dislocation is estimated. It is found that during the layer-by-layer growth, the energy of the topmost layer is lowered through the dimerization of atoms. The energy gap of all Sin/Gen superlattices is found to be indirect. More significantly, the energy separation between the direct and indirect gap continues to decrease with increasing n, and is only 0.07 eV for n = 6. Extended conduction band states below the confined states point to a new feature of the band offset and quantum size effect. Localized states lying deep in the valence and conduction band continua are another novel result found in this study.
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© 1988 Plenum Press, New York
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Ciraci, S., Batra, I.P. (1988). Structure and Electronic Properties of Strained Si/Ge Semiconductor Superlattices. In: Fong, C.Y., Batra, I.P., Ciraci, S. (eds) Properties of Impurity States in Superlattice Semiconductors. NATO ASI Series, vol 183. Springer, Boston, MA. https://doi.org/10.1007/978-1-4684-5553-3_25
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DOI: https://doi.org/10.1007/978-1-4684-5553-3_25
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