Abstract
We present experimental results on the hot electron distribution and energy relaxation process in doped GaAs/AlGaAs quantum wells. The experiments make use of steady state hot electron photoluminescence spectroscopy and fast pulse transport measurement techniques. Our results reveal a negative differential resistance (NDR) with threshold fields of a few hundred volts cm-1 and a surface emission of photons when the electric field is applied along the quantum well layers. These observations are shown to be associated with the quality of the quantum wells.
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© 1988 Plenum Press, New York
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Balkan, N., Ridley, B.K. (1988). Hot Electron Capture in GaAs MQW: NDR and Photo-Emission. In: Fong, C.Y., Batra, I.P., Ciraci, S. (eds) Properties of Impurity States in Superlattice Semiconductors. NATO ASI Series, vol 183. Springer, Boston, MA. https://doi.org/10.1007/978-1-4684-5553-3_18
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DOI: https://doi.org/10.1007/978-1-4684-5553-3_18
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