Abstract
For describing near band edge states of intrinsic (subbands) and extrinsic (impurity states) character in semiconductor structures effective-mass theory is as important as in bulk semiconductors. We 1) reconsider the concept of effective-mass theory in this context, 2) demonstrate, how in a self-consistent calculation of subband states in modulation doped heterostructures the implications of the bulk band structure and doping profiles are considered, and 3) suggest a new concept for treating the impurity problem.
Work supported by Deutsche Forschungsgemeinschaft
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© 1988 Plenum Press, New York
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Rössler, U., Malcher, F., Ziegler, A. (1988). Effective-Mass Theory of Electron States in Heterostructures and Quantum Wells. In: Fong, C.Y., Batra, I.P., Ciraci, S. (eds) Properties of Impurity States in Superlattice Semiconductors. NATO ASI Series, vol 183. Springer, Boston, MA. https://doi.org/10.1007/978-1-4684-5553-3_17
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DOI: https://doi.org/10.1007/978-1-4684-5553-3_17
Publisher Name: Springer, Boston, MA
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