Abstract
This summary abstract reviews the conclusions of recent work by Tersoff and Harrison,1 using the defect-molecule approach of Picoli, Chomette and Lannoo.2 For a more detailed presentation, the reader is referred to Ref. 1, and to references therein.
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References
J. Tersoff and W. A. Harrison, Phys. Rev. Lett. 58, 2367 (1987).
G. Picoli, A. Chomette and M. Lannoo, Phys. Rev. B 30, 7138 (1984).
W. A. Harrison, “Electronic Structure and the Properties of Solids”, Freeman (New York, 1980).
M. J. Caldas, A. Fazzio and A. Zunger, J. Appl. Phys. 45, 671 (1984).
W. A. Harrison and J. Tersoff, J. Vac. Sci. Technol. B 4, 1068 (1986).
J. M. Langer and H. Heinrich, Phys. Rev. Lett. 55, 1414 (1985).
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J. Tersoff, Phys. Rev. Lett. 56, 2755 (1986).
J. Tersoff, Phys. Rev. Lett. 52, 465 (1984); and relerenees therein.
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© 1988 Plenum Press, New York
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Tersoff, J. (1988). “Pinning” of Transition-Metal Impurity Levels. In: Fong, C.Y., Batra, I.P., Ciraci, S. (eds) Properties of Impurity States in Superlattice Semiconductors. NATO ASI Series, vol 183. Springer, Boston, MA. https://doi.org/10.1007/978-1-4684-5553-3_15
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DOI: https://doi.org/10.1007/978-1-4684-5553-3_15
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