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Shallow and Deep Impurity Investigations: The Important Step Towards a Microwave Field-Effect Transistor Working at Cryogenic Temperatures

  • Chapter
Properties of Impurity States in Superlattice Semiconductors

Part of the book series: NATO ASI Series ((NSSB,volume 183))

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Abstract

Current, amplification, output power and frequency limits of field-effect transistors (FETs) are determined by both the carrier concentration and the carrier transport properties (mobility and velocity) in the channel. In GaAs MESFETs the current conducting channel itself is doped with shallow impurities up to levels of 1017 or 1018 cm-3. These high concentrations degrade the mobility.

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Author information

Authors and Affiliations

  1. Universität-GH-Duisburg, SFB 254, D-4100, Duisburg, Germany

    W. Prost, W. Brockerhoff, M. Heuken, S. Kugler & K. Heime

  2. Forschungsinstitut der DBP, D-6100, Darmstadt, Germany

    W. Schlapp & G. Weimann

Authors
  1. W. Prost
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  2. W. Brockerhoff
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  3. M. Heuken
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  4. S. Kugler
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  5. K. Heime
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  6. W. Schlapp
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  7. G. Weimann
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Editor information

Editors and Affiliations

  1. University of California, Davis, Davis, California, USA

    C. Y. Fong

  2. IBM Almaden Research Center, San Jose, California, USA

    Inder P. Batra

  3. Bikent University, Ankara, Turkey

    S. Ciraci

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© 1988 Plenum Press, New York

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Prost, W. et al. (1988). Shallow and Deep Impurity Investigations: The Important Step Towards a Microwave Field-Effect Transistor Working at Cryogenic Temperatures. In: Fong, C.Y., Batra, I.P., Ciraci, S. (eds) Properties of Impurity States in Superlattice Semiconductors. NATO ASI Series, vol 183. Springer, Boston, MA. https://doi.org/10.1007/978-1-4684-5553-3_11

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  • DOI: https://doi.org/10.1007/978-1-4684-5553-3_11

  • Publisher Name: Springer, Boston, MA

  • Print ISBN: 978-1-4684-5555-7

  • Online ISBN: 978-1-4684-5553-3

  • eBook Packages: Springer Book Archive

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