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Physics and Applications of Quantum Wells and Superlattices pp 133–157Cite as

Electrical Transport in Microstructures

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Part of the book series: NATO ASI Series ((NSSB,volume 170))

Abstract

These lectures are intended to provide an introduction to carrier transport in systems with reduced dimensionality. The main application will be to electrons in silicon inversion layers and GaAs heterojunctions and quantum wells. Knowledge of basic aspects of semiconductor physics and of transport in solids, as given, for example, in Kittel1 or Ziman2 will be assumed. More detailed discussions of transport, particularly in semiconductors, can be found in Wilson3 (which includes semiconductors in spite of the title), in “big” Ziman,4 and in Seeger.5 General concepts of heterostructure physics are presented in other lectures in this volume.

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Authors and Affiliations

  1. IBM T.J. Watson Research Center, Yorktown Heights, New York, 10598, USA

    Frank Stern

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  1. Frank Stern
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Editors and Affiliations

  1. IBM Thomas J. Watson Research Center, Yorktown Heights, New York, USA

    E. E. Mendez

  2. Max Planck Institute for Solid State Research, Stuttgart, Federal Republic of Germany

    K. von Klitzing

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Stern, F. (1987). Electrical Transport in Microstructures. In: Mendez, E.E., von Klitzing, K. (eds) Physics and Applications of Quantum Wells and Superlattices. NATO ASI Series, vol 170. Springer, Boston, MA. https://doi.org/10.1007/978-1-4684-5478-9_6

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