Abstract
The new crystal growth techniques (molecular beam epitaxy and metal-organic chemical vapour deposition) allow sufficient control over the layer thicknesses and integrity that resonant tunnelling phenomena can be explored with some precision. Beyond the double barrier diode and the uniform superlattice are a number of novel tunnelling structures, the physics of two of which, the superlattice tunnel diode and the short graded-parameter superlattice, will be discussed in some detail. A short discussion will also be given of the potential role of tunnelling in both two and three terminal devices.
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References
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© 1987 Plenum Press, New York
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Kelly, M.J., Davies, R.A., Couch, N.R., Movaghar, B., Kerr, T.M. (1987). Novel Tunnelling Structures: Physics and Device Implications. In: Mendez, E.E., von Klitzing, K. (eds) Physics and Applications of Quantum Wells and Superlattices. NATO ASI Series, vol 170. Springer, Boston, MA. https://doi.org/10.1007/978-1-4684-5478-9_18
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DOI: https://doi.org/10.1007/978-1-4684-5478-9_18
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